Micromagnetics of Nano-structures

纳米结构的微磁学

• 批准号: 0115164
• 负责人: Siu-Tat Chui
• 金额: $ 24万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2006-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0115164&HistoricalAwards=false
• 关键词: Micromagnetics; Nano; structures

Small magnetic structures are being developed formagnetic sensors (for example, exploiting thegiant magnetoresistance effect, or tunneling magnetoresistance)for nonvolatile memories exploiting either the Hall effect or magnetotransporteffects and for storage on a nano scale.They present challenges in design for controllingthe value and reproducibility of the switching field.Temperature effects as well as fluctuationof the grain structure on a mesoscopic scale become important.At the moment, magnetic nonvolatile memories are being developed byIBM-Siemans (Infinion) and the Motorola Companies.The uniformity of the switching field is a major stumbling block in thecommercilaiztaion of high density nonvolatile magnetic memories.At the moment the yield of addressable sites is very small.Nearly all current micromagnetics calculations are carried outat zero temperature and do not include the temperature effects.In addition, very few systematic investigation were carried out.We propose to study and develop a way to predict the devicecharacteristics and enable their optimum designwith techniques that we have developed over the last several years.These include (a) calculations from an analytic point of view incombination with a finite temperature Monte Carlo code that we have written andoptimized; (b) experimental studies of the switching fieldcharacteristics of our in-house e-beam patterned submicronstructures.

小型磁性结构正在被开发成磁性传感器（例如，利用巨磁电阻效应，或隧道磁电阻），用于利用霍尔效应或磁传输效应的非易失性存储器，并用于纳米级存储。它们在控制开关领域的价值和再现性的设计中提出了挑战。温度效应以及晶粒结构在细观尺度上的波动变得非常重要。目前，磁性非易失性存储器正在由ibm -西门子（Infinion）和摩托罗拉公司开发。开关场的均匀性是实现高密度非易失性磁存储器集成化的主要障碍。目前，可寻址站点的产量非常小。目前几乎所有的微磁学计算都是在零温度下进行的，不包括温度效应。此外，很少进行系统的调查。我们建议研究和开发一种方法来预测器件特性，并利用我们在过去几年中开发的技术实现其最佳设计。这些包括(a)从分析的角度计算，结合我们编写和优化的有限温度蒙特卡罗代码；(b)电子束图亚微结构开关场特性的实验研究。