Magnetically Assisted CMP of Low-K Polymers

低 K 聚合物的磁辅助 CMP

• 批准号: 0115406
• 负责人: Pradeep Fulay
• 金额: $ 24万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-08-15 至 2005-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0115406&HistoricalAwards=false
• 关键词: Magnetically; Assisted; CMP; Low; Polymers

In IC fabrication chemical mechanical planarization (CMP) is used to planarize surfaces ofconductors like aluminum, tungsten, tantalum and copper and dielectrics like silicon dioxide,silicon nitride, and low-k polymers. The CMP process is the only technique available now toprovide surfaces across the die and wafer with planarity sufficient to meet the stringent depth offocus requirements of shorter wavelength lithographic techniques. The CMP of low-k polymericmaterials and architectures overlaid on these polymers is challenging. This is because the low-kpolymeric materials are mechanically softer and even porous, can flow under heat, and havehydrophobic surfaces. There exists a critical need for developing low pressure, selective, andeffective CMP process of the new, low-k polymers and architectures overlaid on these polymers.The primary objective of this program is to develop a novel approach using magneticallyresponsive slurries (MRS) to conduct CMP of low-k polymers and associated structures. Theproject is a joint collaborative, interdisciplinary, synergistic effort between investigators fromClarkson University and University of Pittsburgh, with collaboration with industry. Afundamental and systematic investigation of the feasibility such a magnetically assisted CMPprocess will be conducted. The outcome of this program has the potential for a significantly higheconomic payoff. This project will have significant combined impact on the: basic science thatforms the underpinning of the CMP technology, research infrastructure, and development ofhuman resources.

在集成电路制造中，化学机械平坦化（CMP）用于平坦化诸如铝、钨、钽和铜的导体以及诸如二氧化硅、氮化硅和低k聚合物的导电体的表面。化学机械抛光工艺是目前唯一的技术，它能使芯片和晶片表面的平面度足以满足短波长光刻技术对焦深的严格要求。低k聚合物材料和覆盖在这些聚合物上的结构的CMP是具有挑战性的。这是因为低k聚合物材料在机械上更柔软，甚至是多孔的，可以在加热下流动，并且具有疏水表面。本项目的主要目标是开发一种利用磁响应浆料（MRS）对低介电常数聚合物及其结构进行化学机械抛光的新方法。该项目是克拉克森大学和匹兹堡大学的研究人员与工业界合作的一个联合协作，跨学科，协同努力。对这种磁辅助CMP工艺的可行性进行了基础性和系统性的研究。这个项目的结果有可能带来巨大的经济回报。该项目将对构成CMP技术基础的基础科学、研究基础设施和人力资源开发产生重大综合影响。