Magnetically Assisted CMP of Low-K Polymers

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In IC fabrication chemical mechanical planarization (CMP) is used to planarize surfaces ofconductors like aluminum, tungsten, tantalum and copper and dielectrics like silicon dioxide,silicon nitride, and low-k polymers. The CMP process is the only technique available now toprovide surfaces across the die and wafer with planarity sufficient to meet the stringent depth offocus requirements of shorter wavelength lithographic techniques. The CMP of low-k polymericmaterials and architectures overlaid on these polymers is challenging. This is because the low-kpolymeric materials are mechanically softer and even porous, can flow under heat, and havehydrophobic surfaces. There exists a critical need for developing low pressure, selective, andeffective CMP process of the new, low-k polymers and architectures overlaid on these polymers.The primary objective of this program is to develop a novel approach using magneticallyresponsive slurries (MRS) to conduct CMP of low-k polymers and associated structures. Theproject is a joint collaborative, interdisciplinary, synergistic effort between investigators fromClarkson University and University of Pittsburgh, with collaboration with industry. Afundamental and systematic investigation of the feasibility such a magnetically assisted CMPprocess will be conducted. The outcome of this program has the potential for a significantly higheconomic payoff. This project will have significant combined impact on the: basic science thatforms the underpinning of the CMP technology, research infrastructure, and development ofhuman resources.