Research for Mixed Signal Electronic Technologies: A Joint Initiative Between NSF and SRC: Coupled Device and Circuit Simulation for Critical RF IC Blocks

混合信号电子技术研究:NSF 和 SRC 的联合倡议:关键 RF IC 模块的耦合器件和电路仿真

基本信息

  • 批准号:
    0120275
  • 负责人:
  • 金额:
    $ 15万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2001
  • 资助国家:
    美国
  • 起止时间:
    2001-09-01 至 2005-08-31
  • 项目状态:
    已结题

项目摘要

With the proliferation of RF ICs in consumer electronic products there is a critical need for simulation and modeling tools that enable first pass success in silicon. The trend towards integrating complete systems on a chip, requires very high performance digital, analog, and RF circuits to be integrated on the same silicon substrate. Successful integration of these complex systems requires new design tools and design approaches that significantly advance the state-of-the-art. Certain aspects of RF system performance are easier to characterize and verify in steady state. Examples of these are distortion, power, frequency, noise, and transfer characteristics such as gain and impedance. The proposed work focuses on developing a coupled device and circuit simulator that will accurately address the modeling and simulation needs of critical and noise sensitive analog and RF devices and circuits. A coupled device and circuit simulator provides adirect link between the IC fabrication technology, device design and the higher level of circuit design. Since the models from the device simulator (numerical models) are predictive, they can be used to evaluate the impact of technology on circuit performance. Additionally, this work provides the foundation for new design approaches that will advance the state-of-the-art for analog and RF circuits blocks.This research will focus on modeling, simulation, and design of high performance and high frequency analog and RF circuits. The key contributions of this work will be:A software architecture for incorporating general purpose device simulators in the coupled device and circuit simulator CODECS. The architecture will allow integration without extensive modifications to the device simulator and enable simulation of technologies such as SiGe and SOI, and also simulation of optical devices. This tool architecture also facilitates parallelization over a cluster of workstations.Availability of time-domain and frequency-domain steady-state simulation methods within one simulator. Numerical (physical) models and compact circuit models can be used within this simulator.Capability of simulating device-to-device interactions including substrate and thermal couplings.Coupled device and circuit noise simulation techniques for RF circuits.Validation of simulator with fabrication of improved designs for the following RF circuitry: low noise amplifier (LNA), mixer, and voltage controlled oscillator (VCO). These circuits are critical blocks in a transceiver and are particularly sensitive to noise.The research in this proposal is tightly integrated with a significant educationalcomponent. This will include development of courses in RF integrated circuits, and modeling and simulation for RF applications. A new undergraduate course will be developed. This course will focus on transceiver architectures and discrete design and will include a lab in which students will gain hands-on experience in radio design. The emphasis will be on projects related to transceiver design. The research results, including the software, circuit designs, and course-related materials will be available on the world wide web. In addition, results from the proposed work will be presented at meetings of the Semiconductor Research Corporation and the NSF Center for Design of Analog and Digital ICs.
随着消费电子产品中RF IC的激增,迫切需要能够在硅中实现首次通过成功的仿真和建模工具。在芯片上集成完整系统的趋势要求在同一硅衬底上集成非常高性能的数字、模拟和RF电路。这些复杂系统的成功集成需要新的设计工具和设计方法,显着推进国家的最先进的RF系统性能的某些方面更容易在稳态下表征和验证。例如失真、功率、频率、噪声以及增益和阻抗等传输特性。拟议的工作重点是开发一个耦合器件和电路模拟器,将准确地解决关键和噪声敏感的模拟和RF器件和电路的建模和仿真需求。耦合的器件和电路模拟器提供了集成电路制造技术、器件设计和更高层次的电路设计之间的直接联系。由于器件模拟器的模型(数值模型)具有预测性,因此可用于评估技术对电路性能的影响。此外,这项工作提供了新的设计方法,将推进国家的最先进的模拟和RF电路块的基础。这项研究将集中在建模,仿真和高性能和高频模拟和RF电路的设计。这项工作的主要贡献将是:一个软件架构,将通用设备模拟器耦合器件和电路模拟器CODECS。该架构将允许集成,而无需对器件模拟器进行大量修改,并实现SiGe和SOI等技术的模拟以及光学器件的模拟。这种工具架构也有利于在一个集群的工作站并行化。可用性的时域和频域稳态仿真方法在一个模拟器。该模拟器可使用数值(物理)模型和紧凑电路模型。能够模拟器件与器件之间的相互作用,包括衬底和热耦合。RF电路的耦合器件和电路噪声模拟技术。通过制造以下RF电路的改进设计来验证模拟器:低噪声放大器(LNA)、混频器和压控振荡器(VCO)。这些电路是收发器中的关键模块,对噪声特别敏感。这将包括RF集成电路课程的开发,以及RF应用的建模和仿真。将开发一个新的本科课程。本课程将侧重于收发器架构和分立设计,并将包括一个实验室,学生将获得无线电设计的实践经验。重点将放在与收发器设计有关的项目上。研究结果,包括软件,电路设计,和课程相关的材料将在万维网上提供。此外,拟议工作的结果将在半导体研究公司和NSF模拟和数字IC设计中心的会议上发表。

项目成果

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Kartikeya Mayaram其他文献

SPICE source code implementation of aDC model for the non pinchoff depletion mode MOSFET
  • DOI:
    10.1007/bf01599080
  • 发表时间:
    1984-09-01
  • 期刊:
  • 影响因子:
    2.000
  • 作者:
    S. E. Sussman-Fort;Kartikeya Mayaram
  • 通讯作者:
    Kartikeya Mayaram

Kartikeya Mayaram的其他文献

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{{ truncateString('Kartikeya Mayaram', 18)}}的其他基金

Basic Mechanisms of Radiation Effects in Heterostructure Devices
异质结构器件辐射效应的基本机制
  • 批准号:
    0201237
  • 财政年份:
    2002
  • 资助金额:
    $ 15万
  • 项目类别:
    Standard Grant
CAREER: An Integrated Technology/Circuit CAD Environment for High Performance Communication Systems
职业:高性能通信系统的集成技术/电路 CAD 环境
  • 批准号:
    0096150
  • 财政年份:
    2000
  • 资助金额:
    $ 15万
  • 项目类别:
    Continuing Grant
CAREER: An Integrated Technology/Circuit CAD Environment for High Performance Communication Systems
职业:高性能通信系统的集成技术/电路 CAD 环境
  • 批准号:
    9702292
  • 财政年份:
    1997
  • 资助金额:
    $ 15万
  • 项目类别:
    Continuing Grant

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    青年科学基金项目

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