SBIR/STTR PHASE I: Novel materials technology for high conductivity p-type AlGaN based on AlxGa(1-x)N / AlyGa(1-y)N superlattices

SBIR/STTR 第一阶段：基于 AlxGa(1-x)N / AlyGa(1-y)N 超晶格的高电导率 p 型 AlGaN 新型材料技术

• 批准号: 0128316
• 负责人: John Graff
• 金额: $ 10万
• 依托单位: Boston Nitride Technologies, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-01-01 至 2002-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0128316&HistoricalAwards=false
• 关键词: SBIR; STTR; PHASE; Novel; materials

This Small Business Innovation Research Phase I project will develop a highly conductive p-type AlGaN by construction of AlGaN superlattices. The material p-type AlGaN is key to many optoelectronic and some electronic semiconductor devices. Many characteristics of semiconductor devices containing p-type AlGaN (that is, power efficiency, maximum power, noise properties, maximum operating temperature, heating of the device and reliability) depend on the resistivity of this layer. In this Phase I project, a novel approach for a low-resistivity p-type AlGaN is proposed, namely p-type AlxGa1-xN / AlyGa1-yN superlattices. This approach is based on exploiting potential variations induced by the superlattice and on the polarization fields occurring in the AlGaN material system. The commercial applications of this project will be in the market for electronics and optoelectronic devices. Examples of such devices include bipolar transistors, lasers, LEDs, and photodetectors.

该小型企业创新研究第一阶段项目将通过AlGaN超晶格的构建来开发高导电性p型AlGaN。p型AlGaN材料是许多光电和某些电子半导体器件的关键。包含p型AlGaN的半导体器件的许多特性（即，功率效率、最大功率、噪声特性、最大工作温度、器件的发热和可靠性）取决于该层的电阻率。 在第一阶段计划中，提出了一种新的方法来制备低电阻率的p型AlGaN，即p型AlxGa 1-xN /AlyGa 1-yN超晶格。这种方法是基于利用超晶格引起的电位变化和AlGaN材料系统中发生的极化场。 该项目的商业应用将在电子和光电器件市场。这种器件的示例包括双极晶体管、激光器、LED和光电检测器。