SBIR Phase I: Environmentally Benign, High-Pressure Plasma Cleaning Tool for Photoresists

SBIR 第一阶段：环保型光刻胶高压等离子清洗工具

• 批准号: 0128435
• 负责人: Steven Babayan
• 金额: $ 9.92万
• 依托单位: Surfx Technologies LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-01-01 至 2002-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0128435&HistoricalAwards=false
• 关键词: SBIR; Phase; Environmentally; Benign; Pressure

This Small Business Innovation Research (SBIR) Phase I project will establish the performance of the Plasma Flow Source for stripping and residue cleaning of photoresists on 200 mm semiconductor wafers without producing any environmentally-damaging waste streams. In particular, it will determine the effect of process conditions and gas chemistry on stripping rate and uniformity. Measurements will be performed on standard and heavily implanted photoresists as well as on patterned wafers following reactive ion etching. The novel Plasma Flow Source system produces a large flux of oxygen atoms at low-temperatures and pressures between 10 and 1000 Torr. It has been shown that this source strips photoresists from 100 mm wafers at rates of up to 0.9micron/min at 120 C and 3.0 micron/min at 250 C, with excellent uniformity. The high ash rate observed at 120 C shows promise for removing heavily implanted resists and hardened residues from reactive ion etched substrates. Moreover, operation at higher pressure reduces gas consumption and dramatically decreases pumping requirements. The knowledge gained from this study will establish the potential of this exciting new technology for environmentally-benign, photoresist stripping of wafers for next-generation semiconductor devices.

该小型企业创新研究（SBIR）第一阶段项目将建立等离子体流源的性能，用于剥离和残留物清洁200 mm半导体晶圆上的光刻胶，而不会产生任何对环境有害的废物流。特别是，它将确定工艺条件和气体化学对剥离速率和均匀性的影响。测量将在标准和大量注入的光刻胶以及反应离子蚀刻后的图案化晶片上进行。 新型等离子体流源系统在低温和10至1000托之间的压力下产生大流量的氧原子。结果表明，该光源在120 ℃下以0.9微米/分钟的速率从100毫米晶片上剥离光刻胶，在250 ℃下以3.0微米/分钟的速率从100毫米晶片上剥离光刻胶，具有优异的均匀性。在120 ℃下观察到的高灰化率显示出从反应性离子蚀刻的衬底上去除大量注入的抗蚀剂和硬化残留物的希望。此外，在较高压力下操作减少了气体消耗，并显著降低了泵送要求。从这项研究中获得的知识将建立这种令人兴奋的新技术的潜力，为环境友好，光刻胶剥离晶圆的下一代半导体器件。