Acquisition of a High Resolution X-Ray Diffractometer
购置高分辨率 X 射线衍射仪
基本信息
- 批准号:0131137
- 负责人:
- 金额:$ 21.22万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-02-01 至 2005-01-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
With support from the Chemistry Research Instrumentation and Facilities (CRIF) Program, the Department of Chemistry at the University of Oregon in Eugene will acquire an X-ray diffractometer. This equipment will enhance research in a number of areas including the following: a) development of novel multilayer synthesis of metastable solids; b) characterization of metal-organic multilayers with nonlinear optical properties; c) determination of the structure and size distribution of gold nanoparticles; d) preparation and characterization of inorganic semiconductor | conjugated polymer interfaces; e) low temperature synthesis of new oxide materials using salt metathesis reactions from non-aqueous solvents; and f) synthesis and characterization of novel metal dichalcogenide superlattices.The X-ray diffractometer allows accurate and precise measurements of the full three dimensional structure of a molecule, including bond distances and angles, and it provides accurate information about the spatial arrangement of the molecule relative to the neighboring molecules. These studies will lead to the development of novel materials important to the electronics and optics industries.
在化学研究仪器和设施(CRIF)计划的支持下,位于尤金的俄勒冈大学化学系将获得一台X射线衍射仪。该设备将加强以下领域的研究:a)亚稳态固体的新型多层合成;b)具有非线性光学性质的金属-有机多层膜的表征;c)金纳米颗粒的结构和尺寸分布的测定;d)无机半导体/共轭聚合物界面的制备和表征;e)利用非水溶剂的盐析分解反应低温合成新的氧化物材料;以及f)新型金属二卤化物超晶格的合成和表征。X射线衍射仪可以准确和精确地测量分子的全部三维结构,包括键距离和角度,并提供关于分子相对于邻近分子的空间排列的准确信息。这些研究将导致对电子和光学行业重要的新材料的开发。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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J. David Cohen其他文献
J. David Cohen的其他文献
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{{ truncateString('J. David Cohen', 18)}}的其他基金
Acquisition of a SQUID Magnetometer
获取 SQUID 磁力计
- 批准号:
9871267 - 财政年份:1998
- 资助金额:
$ 21.22万 - 项目类别:
Standard Grant
Electronic Properties of Amorphous Semiconductors
非晶半导体的电子特性
- 批准号:
9624002 - 财政年份:1996
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
Electronic Properties of Amorphous Semiconductors
非晶半导体的电子特性
- 批准号:
9208334 - 财政年份:1992
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
Electronic Properties of Amorphous Semiconductors
非晶半导体的电子特性
- 批准号:
8903383 - 财政年份:1989
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
Electronic Properties of Amorphous Semiconductors (Materials Research)
非晶半导体的电子特性(材料研究)
- 批准号:
8519004 - 财政年份:1986
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
Electronic Properties of Amorphous Semiconductors (Materials Research)
非晶半导体的电子特性(材料研究)
- 批准号:
8207437 - 财政年份:1982
- 资助金额:
$ 21.22万 - 项目类别:
Continuing Grant
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