Electronic Properties of Amorphous Semiconductors

非晶半导体中基本缺陷的研究将在四个一般活动领域进行。本文将利用自旋瞬态测量和电容瞬态方法研究D缺陷在不同弛豫和非弛豫状态下的性质。掺杂多层将研究污染效应和电子捕获到低间隙材料的薄区域。我们将研究c-Si/a-Si:H界面的性质，以了解衬底对近界面区域a-Si:H电子结构的影响。界面缺陷的分布将与ESR和光产生的研究相关。将确定半导体过渡金属硫族化物中的缺陷密度，以帮助开发具有优化电子性能的样品。

The study of fundamental defects in amorphous semiconductors is to be undertaken in four general areas of activity. The proposed work will investigate the nature of the D defect in its different relaxed and unrelaxed states using spin transient measurements and in intrinsic a-Si:H using capacitive transient methods. Doping multilayers will be investigated to study contamination effects and electron trapping into thin regions of the lower gap material. The nature of the c-Si/a-Si:H interface will be examined to understand the effects of the substrate on the a-Si:H electronic structure in the near interface region. The distribution of interface defects will be correlated with ESR and opitcal generation studies. The defect density will be determined in semiconducting transition metal chalcogenides to help develop samples with optimized electronic properties.