Ge Islands on Ultrathin Silicon-on-Insulator: Opportunities for Nanoscale Characterization and Processing of Electronic Materials

超薄绝缘体上硅的 Ge 岛：电子材料纳米级表征和加工的机会

• 批准号: 0208673
• 负责人: Peter Sutter
• 金额: $ 41.8万
• 依托单位: Colorado School of Mines
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-06-01 至 2004-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0208673&HistoricalAwards=false
• 关键词: Ge; Islands; Ultrathin; Silicon; Insulator

This project involves a combination of experimental research and numerical simulation with the objectives of understanding heteroepitaxial materials integration using oxide-supported compos-ite substrates, and of identifying novel routes for materials processing using the strain-fields of self-assembled nanostructures. The proposed work is motivated by recent results on the forma-tion of Ge quantum dot (QD) islands on ultrathin silicon-on-insulator (SOI) substrates. For growth of pyramidal 'hut' islands, a previously unknown local strain relaxation process was found that involves the nanoscale stressor as well as the thin substrate, and results in a pro-nounced buckling of the Si substrate slab. This result suggests a novel route for comprehensive characterization of the incoherent c-Si/a-SiO2 interface in SOI and related composite structures. These studies strive to determine the mechanism by which this interface responds to applied stress, and the temperature-dependent kinetic parameters that govern and limit the response. %%% The project addresses fundamental research issues in a topical area of electronic/photonic materi-als science having technological relevance. An important feature of the project is the strong em-phasis on education, and the integration of research and education. The proposed project offers outstanding research and training opportunities for students at all levels. It will involve participa-tion of undergraduates, and promote the integration of minorities, particularly female students, into science and technology. Planned outreach activities focus on networking with local middle- and high schools and aim at sparking the interest of the younger generation. ***

该项目涉及实验研究和数值模拟的结合，目的是了解使用氧化物支撑复合基板的异质外延材料集成，并确定使用自组装纳米结构的应变场进行材料加工的新途径。这项工作的灵感来自于最近在超薄绝缘体上硅 (SOI) 基板上形成 Ge 量子点 (QD) 岛的结果。对于金字塔形“小屋”岛的生长，发现了一种先前未知的局部应变松弛过程，该过程涉及纳米级应力源以及薄基板，并导致硅基板板发生明显的屈曲。这一结果提出了一种全面表征 SOI 和相关复合结构中非相干 c-Si/a-SiO2 界面的新途径。这些研究致力于确定该界面响应施加应力的机制，以及控制和限制响应的温度相关动力学参数。 %%% 该项目解决具有技术相关性的电子/光子材料科学主题领域的基础研究问题。该项目的一个重要特点是高度重视教育，以及研究与教育的融合。拟议的项目为各个级别的学生提供了出色的研究和培训机会。它将涉及本科生的参与，并促进少数族裔，特别是女学生融入科学技术。计划的外展活动重点是与当地初中和高中建立联系，旨在激发年轻一代的兴趣。 ***