RUI (Collaborative Research): Ion and Radical Beam Tailored Oxide, Nitride, and Germanide Electronic Film Materials

RUI（合作研究）：离子束和自由基束定制的氧化物、氮化物和锗化物电子薄膜材料

• 批准号: 0210162
• 负责人: Daniel Marble
• 金额: $ 5.95万
• 依托单位: Tarleton State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210162&HistoricalAwards=false
• 关键词: RUI; Collaborative; Research; Ion; Radical

This is an RUI collaborative research project among three physics programs at neighboring state universities: Angelo State University, Tarleton State University, and Southwest Texas State Uni-versity. The project focuses on three main topics: (1) correlation between electrical and optical properties and stress in ZnO and nitrogen-doped ZnO fabricated at reduced temperatures using radical atomic beam processing, (2) feasibility of fabricating predicted ZnO-Mn and Zn-Co room temperature transparent magnetic semiconductors, and (3) dielectric properties of select amor-phous or potentially epitaxial insulator oxide alloys consisting of Pr-Al-O, Gd-Ga-O, Hf-Al-O, Pr-Zr-O and La- Hf-O (most with possible oxynitridation and alloy-dependent band gap variabil-ity) relevant for magnetic spin tunneling structures and next-generation CMOS gate applications. A study towards the stabilization and characterization of metastable Ni-incorporated Cu-Ge and Co- Ge thin film crystalline phases will also be included. Thin film materials fabrication will be conducted using ion beam sputter processing strategies. The approach is to implement mono-energetic Ar + or Xe + ions (1 keV) to control incident film adatom energy (between ~ 6 eV to ~ 20 eV), and vary the substrate angle of incidence to promote kinetic film growth at reduced temperatures with and without reflected energetic Ar/Xe atom bombardment. Low energy (100 eV) reactive (O2 + /N2 + ) assist ion beams will be compared with neutral thermal atomic radi-cals to promote optimal oxidation (and dopant nitridation) at reduced substrate temperatures. The implementation of in-situ low energy and/or neutral atomic radical species to promote reactive sputtering is relatively unique for ion beam sputtering and is not possible with magnetron sput-tering due to its higher operating pressure regime. The group also has the capability of processing sputtered films with rapid thermal annealing and high-energy ( 1 MeV) inert ion mixing to study germanide formation in amorphous deposited metal-Ge films. %%% The project addresses fundamental research issues in a topical area of materials science having technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Undergraduates from all three universities will be involved in multiple phases of the research, with strong participation from underrepresented groups. In addition to ion beam sputtering, students will be involved with rapid thermal process-ing, electrical transport studies, ion beam analysis, scanning electron microscopy with EDS, ad-vanced x-ray diffraction and fluorescence analysis, magnetometry, and optical characterization (reflectivity, FTIR, photoluminescence). In addition, students will have a chance to collabora-tively interact with Central Texas microelectronics industry scientists and doctoral institution re-search teams interested in the project. All three collaborating universities are close enough to permit an active degree of inter-university group visits and student exchanges to support the re-search. The research will encourage students to consider pursuing research at various materials-related doctoral programs, or consider further education in a professional masters program. In addition, the broad thin film materials experience gained from the project will be useful prepara-tion for student internships in the microelectronics industry and strengthening the workforce pool of educated BS/MS graduates for this critical industry.***

这是瑞瑞在邻近的三所州立大学：安吉洛州立大学、塔尔顿州立大学和西南得克萨斯州立大学的物理项目之间的合作研究项目。该项目主要集中在三个主题上：(1)利用径向原子束工艺在低温下制备的氧化锌和掺氮氧化锌的电学和光学性质与应力之间的关系，(2)制备预测的氧化锌-锰和锌-钴室温透明磁性半导体的可行性，以及(3)由Pr-Al-O，Gd-Ga-O，Hf-Al-O，Pr-Zr-O和La-Hf-O(大多数可能存在氧氮化和依赖于合金的带隙变化)，适用于磁性自旋隧道结构和下一代CMOS门应用。此外，还将对亚稳态含镍的铜-锗和钴-锗薄膜晶相的稳定化和表征进行研究。薄膜材料的制造将使用离子束溅射处理策略进行。该方法采用单能Ar+或Xe+离子(1keV)来控制入射薄膜的吸附原子能量(~6 eV~~20 eV)，并改变衬底的入射角，在有或没有反射高能Ar/Xe原子轰击的情况下促进薄膜在低温下的动力学生长。低能量(100 EV)反应(O2+/N2+)辅助离子束将与中性热原子束进行比较，以促进在较低的衬底温度下进行最佳氧化(和掺杂氮化)。实现原位低能和/或中性原子自由基物种来促进反应溅射对于离子束溅射来说是相对独特的，而对于磁控溅射来说则是不可能的，因为其工作压力较高。该小组还具有快速热退火和高能(1 MeV)惰性离子混合处理溅射薄膜的能力，以研究非晶态沉积金属-Ge薄膜中锗的形成。%该项目解决与技术相关的材料科学主题领域的基础研究问题。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。来自三所大学的本科生将参与这项研究的多个阶段，代表人数不足的群体将大力参与。除了离子束溅射，学生还将学习快速热处理、电输运研究、离子束分析、带EDS的扫描电子显微镜、高级X射线衍射和荧光分析、磁测量和光学表征(反射率、FTIR、光致发光)。此外，学生将有机会与德克萨斯州中部微电子行业的科学家和对该项目感兴趣的博士机构研究团队进行合作互动。所有三所合作的大学都足够近，可以进行活跃程度的大学间团体访问和学生交流，以支持研究。这项研究将鼓励学生考虑在各种与材料相关的博士项目中进行研究，或者考虑在专业硕士项目中继续深造。此外，从该项目中获得的广泛的薄膜材料经验将为微电子行业的学生实习做好有益的准备，并加强这一关键行业受过教育的BS/MS毕业生的劳动力池。