RUI (Collaborative Research): Ion and Radical Beam Tailored Oxide, Nitride, and Germanide Electronic Film Materials

RUI（合作研究）：离子束和自由基束定制的氧化物、氮化物和锗化物电子薄膜材料

• 批准号: 0210162
• 负责人: Daniel Marble
• 金额: $ 5.95万
• 依托单位: Tarleton State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210162&HistoricalAwards=false
• 关键词: RUI; Collaborative; Research; Ion; Radical

This is an RUI collaborative research project among three physics programs at neighboring state universities: Angelo State University, Tarleton State University, and Southwest Texas State Uni-versity. The project focuses on three main topics: (1) correlation between electrical and optical properties and stress in ZnO and nitrogen-doped ZnO fabricated at reduced temperatures using radical atomic beam processing, (2) feasibility of fabricating predicted ZnO-Mn and Zn-Co room temperature transparent magnetic semiconductors, and (3) dielectric properties of select amor-phous or potentially epitaxial insulator oxide alloys consisting of Pr-Al-O, Gd-Ga-O, Hf-Al-O, Pr-Zr-O and La- Hf-O (most with possible oxynitridation and alloy-dependent band gap variabil-ity) relevant for magnetic spin tunneling structures and next-generation CMOS gate applications. A study towards the stabilization and characterization of metastable Ni-incorporated Cu-Ge and Co- Ge thin film crystalline phases will also be included. Thin film materials fabrication will be conducted using ion beam sputter processing strategies. The approach is to implement mono-energetic Ar + or Xe + ions (1 keV) to control incident film adatom energy (between ~ 6 eV to ~ 20 eV), and vary the substrate angle of incidence to promote kinetic film growth at reduced temperatures with and without reflected energetic Ar/Xe atom bombardment. Low energy (100 eV) reactive (O2 + /N2 + ) assist ion beams will be compared with neutral thermal atomic radi-cals to promote optimal oxidation (and dopant nitridation) at reduced substrate temperatures. The implementation of in-situ low energy and/or neutral atomic radical species to promote reactive sputtering is relatively unique for ion beam sputtering and is not possible with magnetron sput-tering due to its higher operating pressure regime. The group also has the capability of processing sputtered films with rapid thermal annealing and high-energy ( 1 MeV) inert ion mixing to study germanide formation in amorphous deposited metal-Ge films. %%% The project addresses fundamental research issues in a topical area of materials science having technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Undergraduates from all three universities will be involved in multiple phases of the research, with strong participation from underrepresented groups. In addition to ion beam sputtering, students will be involved with rapid thermal process-ing, electrical transport studies, ion beam analysis, scanning electron microscopy with EDS, ad-vanced x-ray diffraction and fluorescence analysis, magnetometry, and optical characterization (reflectivity, FTIR, photoluminescence). In addition, students will have a chance to collabora-tively interact with Central Texas microelectronics industry scientists and doctoral institution re-search teams interested in the project. All three collaborating universities are close enough to permit an active degree of inter-university group visits and student exchanges to support the re-search. The research will encourage students to consider pursuing research at various materials-related doctoral programs, or consider further education in a professional masters program. In addition, the broad thin film materials experience gained from the project will be useful prepara-tion for student internships in the microelectronics industry and strengthening the workforce pool of educated BS/MS graduates for this critical industry.***

这是邻近州立大学的三个物理计划中的RUI合作研究项目：安吉洛州立大学，塔尔顿州立大学和西南德克萨斯州立大学。该项目侧重于三个主要主题：（1）使用自由基原子束处理在降低的温度下制造的电气和光学性能与应力之间的相关性，（2）制造预测的ZnO-MN和Zn-CO室温室温的磁性磁性属性和（3）dielectors和3）的可行性由Pr-AL-O，GD-GA-O，HF-AL-O，PR-ZR-O和LA-HF-O组成的绝缘氧化物（大多数可能具有氧气硝化和合金依赖性的带隙变量性）与磁性自旋隧道结构和下一代CMOS Gate Capplications相关。还包括一项针对亚稳定的NI含有Cu-ge和co-ge薄膜晶体稳定和表征的研究。薄膜材料制造将使用离子束溅射处理策略进行。该方法是实现单能AR +或Xe +离子（1 KEV）来控制入射膜Adatom Energy（〜6 eV至〜20 eV），并改变底物的入射角，以在降低的有和没有反射的能量AR/XE原子剂量的情况下促进动力学膜在降低的温度下生长。低能（100 eV）反应性（O2 + /N2 +）辅助束将与中性热原子放射线 - 在降低的底物温度下促进最佳氧化（和掺杂剂硝化）。实施原位低能和/或中性原子自由基物种以促进反应性溅射是离子束溅射相对独特的，并且由于其较高的工作压力状态而无法使用磁铁旋转量。该小组还具有快速热退火和高能量（1 MEV）惰性离子混合的处理溅射膜，以研究无定形沉积的金属ge膜中的德国形成。 %%%该项目解决了具有技术相关性的材料科学主题领域的基本研究问题。该项目的一个重要特征是对教育以及研究和教育的融合非常重视。来自所有三所大学的大学生将参与研究的多个阶段，而代表性不足的群体的参与。除离子束溅射外，学生还将参与快速热过程，电气传输研究，离子束分析，具有EDS的扫描电子显微镜，AD-VADACD X射线衍射和荧光分析，磁力测定法和光学特征（反射率，FTIR，光亮度）。此外，学生将有机会与德克萨斯州中部微电子行业科学家和博士机构进行合作互动，并重新搜索对该项目感兴趣的团队。这三个合作的大学都足够接近，可以允许积极的大学间访问和学生交流以支持重新搜索。该研究将鼓励学生考虑在各种与材料有关的博士课程中进行研究，或者考虑在专业硕士课程中进行进一步的教育。此外，该项目从该项目中获得的广泛的薄膜材料经验将是对微电子行业的学生实习的有用准备，并加强了这个关键行业的受过教育的BS/MS毕业生的劳动力库。*** ***