RUI (Collaborative Research): Ion and Radical Beam Tailored Oxide, Nitride and Germanide Electronic Film Materials

RUI（合作研究）：离子束和自由基束定制的氧化物、氮化物和锗化物电子薄膜材料

• 批准号: 0210947
• 负责人: Toni Sauncy
• 金额: $ 5.96万
• 依托单位: Angelo State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210947&HistoricalAwards=false
• 关键词: RUI; Collaborative; Research; Ion; Radical

This is an RUI collaborative research project among three physics programs at neighboring state universities: Angelo State University, Tarleton State University, and Southwest Texas State Uni-versity. The project focuses on three main topics: (1) correlation between electrical and optical properties and stress in ZnO and nitrogen-doped ZnO fabricated at reduced temperatures using radical atomic beam processing, (2) feasibility of fabricating predicted ZnO-Mn and Zn-Co room temperature transparent magnetic semiconductors, and (3) dielectric properties of select amor-phous or potentially epitaxial insulator oxide alloys consisting of Pr-Al-O, Gd-Ga-O, Hf-Al-O, Pr-Zr-O and La- Hf-O (most with possible oxynitridation and alloy-dependent band gap variabil-ity) relevant for magnetic spin tunneling structures and next-generation CMOS gate applications. A study towards the stabilization and characterization of metastable Ni-incorporated Cu-Ge and Co- Ge thin film crystalline phases will also be included. Thin film materials fabrication will be conducted using ion beam sputter processing strategies. The approach is to implement mono-energetic Ar + or Xe + ions (1 keV) to control incident film adatom energy (between ~ 6 eV to ~ 20 eV), and vary the substrate angle of incidence to promote kinetic film growth at reduced temperatures with and without reflected energetic Ar/Xe atom bombardment. Low energy (100 eV) reactive (O2 + /N2 + ) assist ion beams will be compared with neutral thermal atomic radi-cals to promote optimal oxidation (and dopant nitridation) at reduced substrate temperatures. The implementation of in-situ low energy and/or neutral atomic radical species to promote reactive sputtering is relatively unique for ion beam sputtering and is not possible with magnetron sput-tering due to its higher operating pressure regime. The group also has the capability of processing sputtered films with rapid thermal annealing and high-energy ( 1 MeV) inert ion mixing to study germanide formation in amorphous deposited metal-Ge films. %%% The project addresses fundamental research issues in a topical area of materials science having technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. Undergraduates from all three universities will be involved in multiple phases of the research, with strong participation from underrepresented groups. In addition to ion beam sputtering, students will be involved with rapid thermal process-ing, electrical transport studies, ion beam analysis, scanning electron microscopy with EDS, ad-vanced x-ray diffraction and fluorescence analysis, magnetometry, and optical characterization (reflectivity, FTIR, photoluminescence). In addition, students will have a chance to collabora-tively interact with Central Texas microelectronics industry scientists and doctoral institution re-search teams interested in the project. All three collaborating universities are close enough to permit an active degree of inter-university group visits and student exchanges to support the re-search. The research will encourage students to consider pursuing research at various materials-related doctoral programs, or consider further education in a professional masters program. In addition, the broad thin film materials experience gained from the project will be useful prepara-tion for student internships in the microelectronics industry and strengthening the workforce pool of educated BS/MS graduates for this critical industry.***

这是RUI在邻近州立大学的三个物理项目之间的合作研究项目：安吉洛州立大学，塔尔顿州立大学和西南德克萨斯州立大学。该项目侧重于三个主要专题：（1）ZnO和使用自由基原子束处理在降低的温度下制造的氮掺杂ZnO中的电学和光学性质与应力之间的相关性，（2）制造预测的ZnO-Mn和Zn-Co室温透明磁性半导体的可行性，和（3）由Pr-Al-O组成的选择的非晶或潜在外延绝缘体氧化物合金的介电性质，Gd-Ga-O、Hf-Al-O、Pr-Zr-O和La-Hf-O（大多数具有可能的氧氮化和合金依赖的带隙可变性）与磁自旋隧道结构和下一代CMOS栅极应用相关。还将包括对亚稳态Ni结合的Cu-Ge和Co-Ge薄膜晶相的稳定化和表征的研究。薄膜材料制造将使用离子束溅射处理策略进行。该方法是实施单能Ar +或Ar+离子（1 keV）以控制入射膜吸附原子能量（在~ 6 eV至~ 20 eV之间），并改变衬底入射角以在具有和不具有反射的高能Ar/Ar+原子轰击的情况下在降低的温度下促进动力学膜生长。低能量（100 eV）反应（O2 + /N2 +）辅助离子束将与中性热原子radi-cals相比，以促进最佳的氧化（和掺杂剂氮化）在降低衬底温度。原位低能量和/或中性原子自由基物种的实施以促进反应溅射对于离子束溅射是相对独特的，并且由于其较高的操作压力范围，不可能使用磁控管溅射。该小组还具有处理溅射薄膜的快速热退火和高能量（1兆电子伏）的惰性离子混合研究锗化物形成在非晶沉积金属锗薄膜的能力。该项目解决了具有技术相关性的材料科学专题领域的基础研究问题。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。来自所有三所大学的本科生将参与研究的多个阶段，代表性不足的群体将积极参与。除了离子束溅射，学生还将参与快速热处理，电输运研究，离子束分析，扫描电子显微镜与EDS，先进的X射线衍射和荧光分析，磁力测量和光学表征（反射率，FTIR，光致发光）。此外，学生将有机会与德克萨斯州中部微电子行业的科学家和对该项目感兴趣的博士研究机构的研究团队进行合作互动。所有三所合作大学的距离都足够近，可以进行积极的大学间团体访问和学生交流，以支持研究。该研究将鼓励学生考虑在各种材料相关的博士课程中进行研究，或考虑在专业硕士课程中继续深造。此外，从该项目中获得的广泛的薄膜材料经验将有助于学生在微电子行业实习，并加强这一关键行业受过教育的BS/MS毕业生的劳动力储备。