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SBIR Phase I: Of Ultra-High-Speed Electronic Integrated Circuits, Interconnects, and Dielectric Ribbons

SBIR Phase I: Of Ultra-High-Speed Electronic Integrated Circuits, Interconnects, and Dielectric Ribbons
SBIR 第一阶段:超高速电子集成电路、互连件和电介质带
批准号:
0214150
负责人:
Cavour Yeh
金额:
$9.97万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-07-01 至 2003-02-28

项目摘要

项目成果

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中文摘要
翻译
这个小企业创新研究第一阶段项目将描述一种使用特殊设计的低损耗介质带的新方法(衰减比传统Ka波段的圆形聚合物棒少100倍),由氧化铝、硅、InP有机硅作为电子集成电路或互连的基本构建块制成。在带状方法中没有金属结构提供了高功率承载能力的可能性。该技术提供了直接将有源器件与低损耗传输介质结合的可能性,为超高速集成电路提供了基础。主要的商业市场包括汽车、半导体、计算机和卫星工业。
英文摘要
This Small Business Innovation Research Phase I Project will describe a new way to use specially designed low loss dielectric ribbons (with attenuation as much as 100 times less than that of a conventional circular polymer rod at Ka band), made with either alumina, silicon, InP orGaAs as fundamental building blocks for electronic integrated circuits or interconnects. The absence of metallic structures in the ribbon approach provides the possibility of high power carrying capability. This technology offers the possibility of directly incorporating active devices with a low-loss transmission medium, provides the foundation for ultra-high-speed integrated circuits. Major commercial markets include the automobile, semiconductor, computer, and satellite industries.
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