SBIR Phase I: Of Ultra-High-Speed Electronic Integrated Circuits, Interconnects, and Dielectric Ribbons

SBIR 第一阶段：超高速电子集成电路、互连件和电介质带

• 批准号: 0214150
• 负责人: Cavour Yeh
• 金额: $ 9.97万
• 依托单位: California Advanced Studies
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2003-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0214150&HistoricalAwards=false
• 关键词: SBIR; Phase; Ultra; Speed; Electronic

This Small Business Innovation Research Phase I Project will describe a new way to use specially designed low loss dielectric ribbons (with attenuation as much as 100 times less than that of a conventional circular polymer rod at Ka band), made with either alumina, silicon, InP orGaAs as fundamental building blocks for electronic integrated circuits or interconnects. The absence of metallic structures in the ribbon approach provides the possibility of high power carrying capability. This technology offers the possibility of directly incorporating active devices with a low-loss transmission medium, provides the foundation for ultra-high-speed integrated circuits. Major commercial markets include the automobile, semiconductor, computer, and satellite industries.

这个小型企业创新研究第一阶段项目将描述一种使用特殊设计的低损耗介质带(衰减比Ka波段的传统圆形聚合物棒小100倍)的新方法，这种介质带由氧化铝、硅、InP或GaAs制成，作为电子集成电路或互连的基本构建块。带式方法中没有金属结构，因此有可能实现高功率承载能力。这项技术提供了直接将有源器件与低损耗传输介质相结合的可能性，为超高速集成电路奠定了基础。主要的商业市场包括汽车、半导体、计算机和卫星行业。