SBIR Phase I: Low Cost Visible Blind Ultra Violet Photodetectors on Glass and Polyimide

SBIR 第一阶段：玻璃和聚酰亚胺上的低成本可见盲紫外光电探测器

• 批准号: 0215175
• 负责人: Ratnakar Vispute
• 金额: $ 9.56万
• 依托单位: BLUE WAVE SEMICONDUCTORS, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0215175&HistoricalAwards=false
• 关键词: SBIR; Phase; Low; Cost; Visible

This Small Business Innovation Research (SBIR) Phase I project proposes to develop innovative visible blind UV detectors based on a novel metal-oxide system that is analogous to Gallium Aluminum Nitride (GaN). It is based on a wide band gap oxide system that is realized by alloying two primary oxide compounds, exhibiting a wider and tunable band gap, creating semiconductor materials which have energy gaps from 3.3 eV to 7.9 eV with high radiation hardness. The project investigator has already patented the concept of making and applying tailorable band gap oxide materials. The goal of this proposal is to study the feasibility of growing wide band gap metal-oxides and ultraviolet detectors on low cost substrates such as glass, polyimide, and silicon for commercialization of cost effective products. This technology can be extended to produce large format detector arrays and which can improve their reliability. Other areas where GaN detectors can be used are in telecommunications, chemical sensing, and homeland security.

这项小型企业创新研究（SBIR）第一阶段项目建议基于类似于氮化镓铝（GaN）的新型金属氧化物系统开发创新的可见盲紫外探测器。它是基于一种宽带隙氧化物系统，通过合金两种初级氧化物化合物，表现出更宽和可调谐的带隙，创造出具有3.3 eV至7.9 eV的能量隙和高辐射硬度的半导体材料。项目研究者已经申请了制造和应用可定制带隙氧化物材料的概念专利。该提案的目标是研究在低成本衬底（如玻璃，聚酰亚胺和硅）上生长宽带隙金属氧化物和紫外线探测器的可行性，以实现成本效益产品的商业化。该技术可以扩展到生产大尺寸的探测器阵列，从而提高它们的可靠性。其他可以使用氮化镓探测器的领域包括电信、化学传感和国土安全。