SBIR Phase II: Low Cost Visible Blind Ultra Violet Photodetectors on Glass and Polyimide

SBIR 第二阶段：玻璃和聚酰亚胺上的低成本可见盲紫外光电探测器

• 批准号: 0321465
• 负责人: Ratnakar Vispute
• 金额: $ 50万
• 依托单位: BLUE WAVE SEMICONDUCTORS, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-11-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0321465&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Low; Cost

This Small Business Innovation Research project proposes commercialization of innovative oxide based visible and solar blind ultra-violet light detectors successfully fabricated and tested. The studies clearly indicate the possibility of growing good quality wide band gap tunable oxide thin films on low cost substrates such as glass, quartz, silicon, and polyimide for photoconductive and Schottky UV photodiodes. The detectors fabricated on these substrates show comparable performance to those of AlGaN on sapphire, and SiC with a high responsivity and UV to visible rejection ratio of more than three orders of magnitude. The feasibility of tuning the detector performance at selective UV regions is also successful which is achieved through innovation of the composition control in the wide band gap oxide layer. The company will extend this technology to commercialize the low cost UV detectors and large format detector arrays for UV radiation monitoring systems for personal safety and consumable products, and exploit additional capabilities beyond the scope of the existing Si, GaAs, and AlGaN technologies.

这个小企业创新研究项目提出了创新的基于氧化物的可见光和日盲紫外光探测器的商业化成功制造和测试。这些研究清楚地表明，在低成本的基板上，如玻璃，石英，硅和聚酰亚胺的光电导和肖特基紫外光电二极管生长良好的质量宽带隙可调氧化物薄膜的可能性。在这些衬底上制造的探测器显示出与蓝宝石上的AlGaN和SiC的性能相当的性能，具有高响应度和超过三个数量级的UV到可见光抑制比。在选择性的UV区域调谐检测器性能的可行性也是成功的，这是通过在宽带隙氧化物层中的成分控制的创新来实现的。该公司将扩展这项技术，将低成本紫外线探测器和大尺寸探测器阵列商业化，用于个人安全和消费品的紫外线辐射监测系统，并开发现有Si、GaAs和AlGaN技术范围之外的其他功能。