Physics of On-State Breakdown in InAIAs/InGaAs High Electron Mobility Transistors

InAIAs/InGaAs 高电子迁移率晶体管的通态击穿物理

• 批准号: 0229321
• 负责人: Mark Somerville
• 金额: $ 8.66万
• 依托单位: Franklin W. Olin College of Engineering
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0229321&HistoricalAwards=false
• 关键词: Physics; State; Breakdown; InAIAs; InGaAs

9906552SomervilleThe goal of this proposal is to illuminate experimentally the physics of burnout and on-state breakdown in InAlAs/InGaAs high electron mobility transistors (HEMTs). These devices are extremely attractive for a growing number of high frequency applications, including collision avoidance radar systems, wireless LANS, and ultra high speed switching networks. Many of the applications require high breakdown voltage; as a result, great effort has been devoted to understanding and improving off-state breakdown in InAlAs/InGaAs HEMTs. However, as off-state breakdown has improved, it has become clear that the bottleneck is the problem of on-state breakdown and associated burnout. Relatively little work has been done in this area. It is thought that impact ionization is involved, but the details of the mechanism are unknown, as are the impact of various device design parameters. By investigating the physics of on-state breakdown and burnout, the proposed research program will identify promising design directions for InAlAs/InGaAs HEMTs to help alleviate the problem.The research program involves development of a customized measurement system to allow visible and NIR spectroscopy of on-state breakdown in InAlAs/InGaAs HEMTs under a variety of thermal and bias conditions; the use of the system for extensive measurements on a large sample set of state-of-the-art devices; and extensive data reduction and model development. The project is designed with student participation in mind; much of the work will be done by undergraduate researchers under the supervision of the PI. Thus, in addition to enhancing understanding of the problem of on-state breakdown, the proposed research program will introduce undergraduate students to modern research techniques and instrumentation in the area of device physics, and will afford these students the opportunity to do real research on a critical technology.***

本方案的目的是从实验上阐明InAlAs/InGaAs高电子迁移率晶体管(HEMT)的烧毁和导通击穿的物理机制。这些器件对于越来越多的高频应用极具吸引力，包括防撞雷达系统、无线局域网和超高速交换网络。许多应用需要较高的击穿电压，因此，人们一直致力于了解和改善InAlAs/InGaAsHEMT的关态击穿。然而，随着关闭状态故障的改善，瓶颈显然是开状态故障和相关的耗尽问题。这方面的工作相对较少。人们认为这涉及到碰撞电离，但机制的细节尚不清楚，各种设备设计参数的影响也是如此。通过研究导通击穿和烧毁的物理机制，拟议的研究计划将确定InAlAs/InGaAs HEMT的有前途的设计方向，以帮助缓解这一问题。研究计划包括开发定制的测量系统，以允许在各种热和偏压条件下InAlAs/InGaAsHEMT的导通击穿的可见和近红外光谱；使用该系统在大量最先进的器件样本集上进行广泛的测量；以及广泛的数据简化和模型开发。该项目的设计考虑到了学生的参与；大部分工作将由本科生研究人员在PI的监督下完成。因此，除了加强对状态击穿问题的理解外，拟议的研究计划还将向本科生介绍设备物理领域的现代研究技术和仪器，并将为这些学生提供在关键技术上进行真正研究的机会。