GOALI: Nanoscale Characterization and Development of Ultra Low-k Dielectric Xerogel Films

这项工作的重点是了解键合、组成和互连的基本影响，这些影响决定了新的低密度材料的性质。通过在纳米尺度上了解这些方面以及它们与宏观性能的关系，我们将能够在开发具有更好特性的新材料时优化所需的特性。尤其令人感兴趣的是更好地了解多孔低k薄膜的行为，这些薄膜可用于开发具有与未来半导体需求相称的性能的层间电介质(ILD)材料。为了获得未来集成电路器件所需的介电常数，必须在ILD薄膜中引入孔隙率。孔隙率的增加会导致机械性能的降低，因为可用于增强材料的材料较少。这项工作中包括的表征将纳米尺度的特性与多孔二氧化硅干凝胶薄膜的宏观尺度行为联系起来。这些研究将加深我们对纳米结构排列和表面化学的理解，这些纳米结构和表面化学可以优化薄膜的介电常数和机械性能。改进的低密度材料将促进更快、更可靠的集成电路的发展，就像现代计算机和手机中使用的集成电路一样。在该项目的任期内，将为一名本科生、两名研究生和一名博士后研究员提供半导体材料表征和薄膜合成方面的全面背景知识。此外，每个人都将有机会通过每周与我们的工业合作伙伴德州仪器公司举行会议，在对未来行业需求至关重要的问题上与半导体公司直接合作。这一合作项目还将有助于弥合在将技术从研究领域转移到商业应用方面经常出现的差距。

This work focuses on understanding the fundamental effects of bonding, composition, and interconnectivity that establish the properties of new, low-density materials. By understanding these aspects at the nano-scale and how they relate to the macro-scale properties, we will be able to optimize the desirable characteristics as we develop new materials with even better characteristics. Of particular interest is a better understanding of the behavior of porous low-k films that may be used to develop interlayer dielectric (ILD) materials with properties commensurate with future semiconductor needs. Porosity must be introduced into ILD films to attain dielectric constants necessary for future integrated circuit devices. Increased porosity results in diminished mechanical properties because less material is available to strengthen the material. The characterization included in this work relates nano-scale properties to macro-scale behavior of porous silica xerogel films. These studies will enhance our understanding of the nano-structural arrangements and surface chemistries that can optimize film dielectric constants and mechanical properties. The improved low-density materials will facilitate the development of faster, more reliable integrated circuits like those used in modern computers and cell phones. During the tenure of this program, one undergraduate, two graduate students, and a postdoctoral researcher will be provided a thorough background in semiconductor material characterization and thin film synthesis. In addition each will have the opportunity to work directly work with a semiconductor company on issues critical to future industry needs, through weekly meetings with our industrial partner, Texas Instruments. This cooperative venture will also serve to bridge the gap that often arises in transferring technology from the research arena to the commercial application..