GOALI: Nanoscale Characterization and Development of Ultra Low-k Dielectric Xerogel Films

GOALI：超低 k 介电干凝胶薄膜的纳米级表征和开发

• 批准号: 0316916
• 负责人: Richard Reidy
• 金额: --
• 依托单位: University of North Texas
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-15 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0316916&HistoricalAwards=false
• 关键词: GOALI; Nanoscale; Characterization; Development; Ultra

This work focuses on understanding the fundamental effects of bonding, composition, and interconnectivity that establish the properties of new, low-density materials. By understanding these aspects at the nano-scale and how they relate to the macro-scale properties, we will be able to optimize the desirable characteristics as we develop new materials with even better characteristics. Of particular interest is a better understanding of the behavior of porous low-k films that may be used to develop interlayer dielectric (ILD) materials with properties commensurate with future semiconductor needs. Porosity must be introduced into ILD films to attain dielectric constants necessary for future integrated circuit devices. Increased porosity results in diminished mechanical properties because less material is available to strengthen the material. The characterization included in this work relates nano-scale properties to macro-scale behavior of porous silica xerogel films. These studies will enhance our understanding of the nano-structural arrangements and surface chemistries that can optimize film dielectric constants and mechanical properties. The improved low-density materials will facilitate the development of faster, more reliable integrated circuits like those used in modern computers and cell phones. During the tenure of this program, one undergraduate, two graduate students, and a postdoctoral researcher will be provided a thorough background in semiconductor material characterization and thin film synthesis. In addition each will have the opportunity to work directly work with a semiconductor company on issues critical to future industry needs, through weekly meetings with our industrial partner, Texas Instruments. This cooperative venture will also serve to bridge the gap that often arises in transferring technology from the research arena to the commercial application..

这项工作的重点是了解键合，组成和相互连接的基本影响，这些影响建立了新的低密度材料的性能。通过在纳米尺度上理解这些方面以及它们与宏观尺度特性的关系，我们将能够在开发具有更好特性的新材料时优化所需的特性。特别感兴趣的是更好地理解多孔低k薄膜的行为，这可能用于开发具有与未来半导体需求相称的性能的层间介电（ILD）材料。为了获得未来集成电路器件所需的介电常数，必须在ILD薄膜中引入孔隙率。孔隙率的增加导致机械性能的降低，因为可用于增强材料的材料减少了。表征包括在这项工作涉及到纳米尺度的性质和宏观尺度的多孔二氧化硅干凝胶膜的行为。这些研究将增强我们对纳米结构排列和表面化学的理解，从而优化薄膜的介电常数和力学性能。这种改进的低密度材料将促进更快、更可靠的集成电路的发展，就像现代电脑和手机中使用的那样。在这个项目的任期内，一名本科生，两名研究生和一名博士后研究员将提供半导体材料表征和薄膜合成的全面背景。此外，每个人都将有机会通过与我们的工业合作伙伴德州仪器的每周会议，直接与半导体公司合作，解决对未来行业需求至关重要的问题。这项合作事业还将有助于弥合在将技术从研究领域转移到商业应用方面经常出现的差距。