GOALI: Nanoscale Characterization and Development of Ultra Low-k Dielectric Xerogel Films

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This work focuses on understanding the fundamental effects of bonding, composition, and interconnectivity that establish the properties of new, low-density materials. By understanding these aspects at the nano-scale and how they relate to the macro-scale properties, we will be able to optimize the desirable characteristics as we develop new materials with even better characteristics. Of particular interest is a better understanding of the behavior of porous low-k films that may be used to develop interlayer dielectric (ILD) materials with properties commensurate with future semiconductor needs. Porosity must be introduced into ILD films to attain dielectric constants necessary for future integrated circuit devices. Increased porosity results in diminished mechanical properties because less material is available to strengthen the material. The characterization included in this work relates nano-scale properties to macro-scale behavior of porous silica xerogel films. These studies will enhance our understanding of the nano-structural arrangements and surface chemistries that can optimize film dielectric constants and mechanical properties. The improved low-density materials will facilitate the development of faster, more reliable integrated circuits like those used in modern computers and cell phones. During the tenure of this program, one undergraduate, two graduate students, and a postdoctoral researcher will be provided a thorough background in semiconductor material characterization and thin film synthesis. In addition each will have the opportunity to work directly work with a semiconductor company on issues critical to future industry needs, through weekly meetings with our industrial partner, Texas Instruments. This cooperative venture will also serve to bridge the gap that often arises in transferring technology from the research arena to the commercial application..