STTR Phase II: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

这个小型企业技术转移(STTR)二期项目将开发一种垂直腔面发射激光器(VCSEL)，该激光器在1.3微米波长下工作，其基础是结合基于GaAs的InAs和GaAsSb的量子点有源区。它基于大学实验室在开发新型1.3微米激光器和VCSEL光源方面的最新研究进展，以及该公司的商业外延生长能力。在该项目中，涉及的任务包括生长GaAsSb量子点和量子井结构，使用基于InGaAs和GaAsSb的量子点和GaAsSb量子阱有源区制造垂直腔面发射激光器，以及开发、演示和评估适用于商业1.3微米垂直腔面发射激光器的可制造的高Q腔。该项目将为新兴的光纤市场带来重要的新产品。低成本1.3微米波长的VCSEL被行业分析师视为为城域和城域接入市场大规模生产光纤收发器的关键使能设备。

This Small Business Technology Transfer (STTR) Phase II project will develop a vertical cavity surface emitting laser (VCSEL) that operates at 1.3 micron wavelength based on incorporating a quantum dot active region of GaAs-based InAs and GaAsSb. It is based on recent research developments within the university laboratory in developing novel 1.3 micron laser and VCSEL sources, and the commercial epitaxial growth capability of the company. In the project the tasks involved include growing GaAsSb quantum dots and quantum well structures, fabricating VCSELs using the InGaAs and GaAsSb based quantum dot and GaAsSb quantum well active regions, and development, demonstration and evaluation of manufacturable, high Q cavity suitable for commercial 1.3 micron VCSELs.Commercially the project will lead to important new products for an emerging fiber optic market. The low cost 1.3 micron wavelength VCSEL is viewed by industry analysts as a key enabling device for high volume production of fiber optic transceivers for the metro and metro access markets.