STTR Phase II: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material

STTR第二期：基于纳米结构活性材料的垂直腔面发射激光器

• 批准号: 0321699
• 负责人: Noren Pan
• 金额: $ 50万
• 依托单位: MICROLINK DEVICES INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0321699&HistoricalAwards=false
• 关键词: STTR; Phase; II; Vertical; Cavity

This Small Business Technology Transfer (STTR) Phase II project will develop a vertical cavity surface emitting laser (VCSEL) that operates at 1.3 micron wavelength based on incorporating a quantum dot active region of GaAs-based InAs and GaAsSb. It is based on recent research developments within the university laboratory in developing novel 1.3 micron laser and VCSEL sources, and the commercial epitaxial growth capability of the company. In the project the tasks involved include growing GaAsSb quantum dots and quantum well structures, fabricating VCSELs using the InGaAs and GaAsSb based quantum dot and GaAsSb quantum well active regions, and development, demonstration and evaluation of manufacturable, high Q cavity suitable for commercial 1.3 micron VCSELs.Commercially the project will lead to important new products for an emerging fiber optic market. The low cost 1.3 micron wavelength VCSEL is viewed by industry analysts as a key enabling device for high volume production of fiber optic transceivers for the metro and metro access markets.

该小企业技术转让（STTR）第二阶段项目将开发一种垂直腔面发射激光器（VCSEL），该激光器基于GaAs基InAs和GaAsSb量子点有源区，工作波长为1.3微米。它是基于大学实验室在开发新型1.3微米激光和VCSEL光源方面的最新研究进展，以及该公司的商业外延生长能力。 该项目的主要任务包括：生长GaAsSb量子点和量子阱结构，利用InGaAs和GaAsSb量子点和GaAsSb量子阱有源区制作VCSEL，以及开发、演示和评估适用于商用1.3微米VCSEL的可制造高Q腔。 低成本的1.3微米波长VCSEL被行业分析师视为大批量生产光纤收发器的关键设备，用于地铁和地铁接入市场。