SBIR Phase I: Advanced Lift-off Technology for Low cost III-V Solar Cell Manufacturing

SBIR 第一阶段：用于低成本 III-V 太阳能电池制造的先进剥离技术

• 批准号: 0637976
• 负责人: Noren Pan
• 金额: $ 10万
• 依托单位: MICROLINK DEVICES INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637976&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Lift; off

This SBIR Phase I research project will develop a lower cost high quality compound semiconductor thin film for advanced renewable energy technology. This program will investigate Multiple-layer Epitaxial Lift Off (MELO) technique as it applies to a group of Photovoltaic (PV) epitaxial structures grown on GaAs. Current state of the art PV devices are fabricated on expensive GaAs substrates, which are then incorporated into the final product at high costs. MELO will significantly reduce the cost down to the epitaxial material costs alone by spreading the total manufacturing cycle over many structures on one wafer. The company will have established a 100mm diameter Epitaxial Lift Off technology that has been extended to the maximum number of epitaxial structures that can be grown on one wafer. The broader impact of this proposed activity includes the possibility to produce any structure compatible with MELO technology. This may include lower cost Hetero-Bipolar Transistor (HBT) devices that directly benefit from the transfer to more suitable thermally dissipative and electrically isolated substrates.

SBIR第一阶段研究项目将开发一种低成本、高质量的化合物半导体薄膜，用于先进的可再生能源技术。本计画将探讨多层磊晶剥离（梅洛）技术，因为它适用于一组在砷化镓上成长的光伏（PV）磊晶结构。现有技术的PV器件是在昂贵的GaAs衬底上制造的，然后以高成本将其结合到最终产品中。梅洛将通过将整个制造周期分散在一个晶片上的许多结构上来显著降低成本，仅外延材料成本。该公司将建立一个100毫米直径的外延剥离技术，已扩展到最大数量的外延结构，可以在一个晶圆上生长。这一拟议活动的更广泛影响包括有可能生产与梅洛技术兼容的任何结构。这可以包括直接受益于转移到更合适的热耗散和电隔离衬底的较低成本的异质双极晶体管（HBT）器件。