Morphological and eletrical studies of new bi-functional SAM molecules for realization of organic floating gate memories

用于实现有机浮栅存储器的新型双功能 SAM 分子的形态学和电学研究

• 批准号: 163849403
• 负责人: Professor Dr. Marcus Halik
• 金额: --
• 依托单位: Lehrstuhl für Polymerwerkstoffe
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/163849403?language=en
• 关键词: Morphological; eletrical; studies; new; bi

Floating gate memories are standard architectures to generate low-power consuming, non-volatile memories (NVM) on the base of mono crystalline silicon layer (layer thickness 7-10 nm) [1]. In 2007 these electronic devices have accessed the mass market with 13.9 Bill. US$. In the final quart of 2009 there will be 60% of Laptops equipped with this shock resistant and power-saving technology (iSupply), demonstrating the huge success of this technical approach. Simple concepts of organic non-volatile memories (NVM) are of enormous interest due to their potential application in low-cost flexible electronics, e.g. to individualize radio frequency identification tags (RFID-tags) or to program variable information on smart cards. In these low-end applications the memory technology is not driven by high storage densities rather than simple processing, robust functionality and high reliability. Thus, the goal of new organic NVMs is not in competition to the well established high storage density NVMs based on silicon platforms, but to capture new application fields due to their basic attribute, to be placed on flexible substrates like plastics or paper [2], [3], [4], [5]. The goal of this project is the realization and investigation of electrically programmable molecular gate dielectric layer for organic thin film transistors (OTFTs), which can be reversibly charged and discharged and remain these digital states even the electrical field is removed. The dielectric systems are created from a mixed monolayer of special molecules on a patterned and activated A!-gate approaching and simplifying the classical memory multi-layer stack as known from silicon technology (barrier oxide - floated gate - tunnel oxide) on a molecular level by self-assembling organic molecules. Design, synthesis and self-assembling of bi-functional molecules, which are able to reversible charge storage and thereby controlling the transistor threshold voltage (thus the drain current at a given voltage) will offer a new approach in low-power molecular scale electronics with new functionality. The electrical properties of self-assembled monolayers (SAMs) based on these new molecules will be investigated in capacitors and low-voltage transistors at air and ambient conditions (threshold voltage, hysteresis, leakage current). SAMs based on these bi-functional molecules as well as mixed SAMs (bi- and mon-functional molecules) are of interest. Furthermore, floating gate devices are investigated due to their reversibility functionality, retention time, switching voltage and switching speed. Temperature dependent investigations on the stability of charges should provide information according to charging mechanisms and deletion processes (Fowler-Nordheim tunnelling, hot carrier injection). A new technique will be introduced to investigate the surface of high isolating layers at nano scale resolution (by detection of hydrophobic/hydrophilic areas). AFM measurements in aqueous environment can reveal the ordering of SAM layers concerning formation of domains and substructures and furthermore of phase behaviour of mixed SAM layers (phase separation, mixtures). This morphological characterisation method closes the gap between molecular modelling, molecule synthesis and the electrical performance of molecular electronics and is an essential method to correlate electrical properties to morphological SAM properties. Furthermore a basic understanding In SAM formation is expected - in particular on surfaces of relevance!

浮栅存储器是在单晶硅层（层厚度7-10 nm）的基础上产生低功耗非易失性存储器（NVM）的标准架构[1]。2007年，这些电子设备以13.9比尔的价格进入大众市场。美元。到2009年年底，将有60%的笔记本电脑配备了这种抗震和节能技术（iSupply），这表明了这种技术方法的巨大成功。有机非易失性存储器（NVM）的简单概念由于其在低成本柔性电子器件中的潜在应用而引起极大的兴趣，例如用于个性化射频识别标签（RFID标签）或用于在智能卡上编程可变信息。在这些低端应用中，存储器技术不是由高存储密度驱动的，而是简单的处理、强大的功能和高可靠性。因此，新的有机NVM的目标不是与基于硅平台的成熟的高存储密度NVM竞争，而是由于其基本属性而捕获新的应用领域，将其放置在柔性基板上，如塑料或纸[2]，[3]，[4]，[5]。本项目的目标是实现和研究用于有机薄膜晶体管（OTFT）的电可编程分子栅介电层，其可以可逆地充电和放电，并且即使电场被移除也保持这些数字状态。介电系统是由在图案化和活化的A！-栅极通过自组装有机分子在分子水平上接近和简化了从硅技术（阻挡氧化物-浮置栅极-隧道氧化物）已知的经典存储器多层叠层。设计、合成和自组装双功能分子，它们能够可逆地存储电荷，从而控制晶体管的阈值电压（因此在给定电压下的漏电流），这将为具有新功能的低功率分子尺度电子学提供新的方法。基于这些新分子的自组装单分子膜（SAMs）的电性能将在电容器和低压晶体管中在空气和环境条件下（阈值电压，滞后，漏电流）进行研究。基于这些双功能分子的SAM以及混合SAM（双功能和单功能分子）是令人感兴趣的。此外，浮栅器件还因其可逆功能、保留时间、开关电压和开关速度而受到研究。对电荷稳定性的温度依赖性研究应根据充电机制和删除过程（福勒-诺德海姆隧道效应、热载流子注入）提供信息。将引入一种新技术，以纳米级分辨率（通过检测疏水/亲水区域）研究高隔离层的表面。在水环境中的AFM测量可以揭示SAM层的有序结构域和子结构的形成，以及混合SAM层的相行为（相分离，混合物）。这种形态表征方法缩小了分子建模、分子合成和分子电子学的电性能之间的差距，并且是将电性能与形态SAM性能相关联的基本方法。此外，在SAM形成的基本理解是预期的-特别是在表面的相关性！

项目成果

Photoactive self-assembled monolayers for optically switchable organic thin-film transistors

• DOI: 10.1063/1.4804595
• 发表时间: 2013-05
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: M. Salinas;M. Halik

The relationship between threshold voltage and dipolar character of self-assembled monolayers in organic thin-film transistors.

• DOI: 10.1021/ja303807u
• 发表时间: 2012-07
• 期刊: Journal of the American Chemical Society
• 影响因子: 15
• 作者: M. Salinas;C. M. Jäger;Atefeh Y. Amin;Pavlo O. Dral;T. Meyer-Friedrichsen;A. Hirsch;T. Clark;M. H

Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

• DOI: 10.1002/admi.201400238
• 发表时间: 2014-12
• 期刊: Advanced Materials Interfaces
• 影响因子: 5.4
• 作者: A. Khassanov;T. Schmaltz;Hans‐Georg Steinrück;A. Magerl;A. Hirsch;M. Halik