Student and Young Faculty Support to Attend the 34th Semiconductor Interface Specialists Conference; Arlington, VA; December 4-6, 2003

支持学生和青年教师参加第 34 届半导体接口专家会议；

• 批准号: 0400581
• 负责人: Robert Wallace
• 金额: $ 0.5万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-22 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0400581&HistoricalAwards=false
• 关键词: Student; Young; Faculty; Support; Attend

A conference on semiconductor/insulator interfaces, and the interaction between materials science, device physics, and technology will be held December 4-6, 2003 in Arlington, VA. The conference is interdisciplinary, and will cover many areas of MOS science and technology, including: alternative and high-k gate dielectric materials; physics of thin dielectrics and their interfaces; gate-dielectric conduction and breakdown; silicon carbide and its interfaces; physical and electrical characterization of si/sio2 interfaces; micro-roughness measurement, modeling, and device-related effects; hot carrier, plasma damage and radiation effects; nitrogen-containing oxides and stacked interfaces; surface cleaning technology and effects on dielectrics and interfaces; novel oxidation, deposition, and etching techniques; and theory of oxide and interface defects.An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. The program is organized as a workshop-style conference to provide a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. Objectives are to stimulate communications among the broad community of researchers addressing semiconductor/insulator interfaces and their relationship to technology. A variety of disciplinary backgrounds-chemistry, physics, engineering and materials science, is represented and contrributes positively to the intellectual content of the Conference. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry.%%%An evaluation of the progress and status of semiconductor/insulator interfaces and related device issues along with current assessments of the most important developments will be of significant value to the understanding and enhanced utilization of electronic materials in computing, data processing, and communications. ***

2003年12月4日至6日，在弗吉尼亚州的阿灵顿将举行一次关于半导体/绝缘体界面以及材料科学、器件物理和技术之间相互作用的会议。该会议是跨学科的，将涵盖MOS科学和技术的许多领域，包括：替代和高k栅介质材料;薄介质及其界面的物理;栅介质传导和击穿;碳化硅及其界面; Si/SiO2界面的物理和电学特性;微观粗糙度测量，建模和器件相关效应;热载流子、等离子体损伤和辐射效应;含氮氧化物和叠层界面;表面清洗技术及其对氧化物和界面的影响;新的氧化、沉积和蚀刻技术;以及氧化物和界面缺陷理论。会议的一个重要目标是提供一个鼓励科学之间相互作用的环境和技术问题。该计划以研讨会形式组织，为器件工程师，固态物理学家和材料科学家提供一个论坛，通过邀请和贡献的演讲正式讨论共同感兴趣的主题，并在各种活动中非正式地讨论，包括海报展示会议。目标是促进研究人员解决半导体/绝缘体接口及其与技术的关系的广泛社区之间的通信。各种学科背景，化学，物理，工程和材料科学，是代表和contributes积极的知识内容的会议。沿着评估该领域和未来方向的机会，预计将在大学、研究机构和行业之间建立新的联系。%对半导体/绝缘体界面和相关器件问题的进展和现状的评估沿着对最重要发展的当前评估，对于理解和提高电子材料在计算、数据处理和通信中的利用具有重要价值。 ***