Student and Young Faculty Support to Attend the 34th Semiconductor Interface Specialists Conference; Arlington, VA; December 4-6, 2003

2003年12月4日至6日，美国弗吉尼亚州阿灵顿市将举行一次关于半导体/绝缘体界面以及材料科学、器件物理和技术之间的相互作用的会议，该会议是跨学科的，将涵盖MOS科学和技术的许多领域，包括：替代和高k栅极介电材料；薄介电体及其界面物理学；栅极介电传导和击穿；碳化硅及其界面；si/sio2界面的物理和电学特性微粗糙度测量、建模和设备相关效果；热载流子、等离子体损伤和辐射效应；含氮氧化物和堆叠界面；表面清洁技术及其对电介质和界面的影响；新的氧化、沉积和蚀刻技术；以及氧化物和界面缺陷的理论。会议的一个重要目标是提供一个环境，鼓励科学和技术问题之间的相互作用。该计划组织为研讨会式会议，为设备工程师，固态物理学家和材料科学家提供一个论坛，讨论共同感兴趣的主题，包括正式的邀请和贡献演讲，以及非正式的各种活动，包括海报展示会议。目的是促进广大研究人员之间的交流，解决半导体/绝缘体接口及其与技术的关系。各种学科背景——化学、物理、工程和材料科学——都有代表，并对会议的知识内容作出了积极贡献。除了有机会评估该领域和未来方向外，预计还将在大学、研究机构和产业界之间建立新的联系。对半导体/绝缘体接口和相关器件问题的进展和现状的评估，以及对当前最重要发展的评估，将对理解和提高电子材料在计算、数据处理和通信中的利用具有重要价值。* * *

A conference on semiconductor/insulator interfaces, and the interaction between materials science, device physics, and technology will be held December 4-6, 2003 in Arlington, VA. The conference is interdisciplinary, and will cover many areas of MOS science and technology, including: alternative and high-k gate dielectric materials; physics of thin dielectrics and their interfaces; gate-dielectric conduction and breakdown; silicon carbide and its interfaces; physical and electrical characterization of si/sio2 interfaces; micro-roughness measurement, modeling, and device-related effects; hot carrier, plasma damage and radiation effects; nitrogen-containing oxides and stacked interfaces; surface cleaning technology and effects on dielectrics and interfaces; novel oxidation, deposition, and etching techniques; and theory of oxide and interface defects.An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. The program is organized as a workshop-style conference to provide a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. Objectives are to stimulate communications among the broad community of researchers addressing semiconductor/insulator interfaces and their relationship to technology. A variety of disciplinary backgrounds-chemistry, physics, engineering and materials science, is represented and contrributes positively to the intellectual content of the Conference. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry.%%%An evaluation of the progress and status of semiconductor/insulator interfaces and related device issues along with current assessments of the most important developments will be of significant value to the understanding and enhanced utilization of electronic materials in computing, data processing, and communications. ***