Student and Young Faculty Support to Attend the 34th Semiconductor Interface Specialists Conference; Arlington, VA; December 4-6, 2003

2003年12月4日至6日，将在弗吉尼亚州阿灵顿举行一次关于半导体/绝缘体界面以及材料科学、设备物理和技术之间的相互作用的会议。这次会议是跨学科的，将涉及MOS科学和技术的许多领域，包括：替代和高k栅电介质材料；薄介质及其界面的物理；栅电介质的传导和击穿；碳化硅及其界面；Si/SiO_2界面的物理和电学表征；微观粗糙度测量、建模和与器件相关的效应；热载流子、等离子体损伤和辐射效应；含氮氧化物和堆叠界面；表面清洁技术和对介质和界面的影响；新的氧化、沉积和蚀刻技术；以及氧化物和界面缺陷的理论。这次会议的一个重要目标是提供一个鼓励科学和技术问题相互作用的环境。该计划以研讨会形式组织，为设备工程师、固态物理学家和材料科学家提供一个论坛，通过邀请和贡献的演示文稿正式讨论共同感兴趣的主题，并在包括海报演示会议在内的各种活动中非正式地讨论共同感兴趣的主题。目标是促进研究半导体/绝缘体界面及其与技术的关系的广大研究人员之间的交流。各种学科背景--化学、物理、工程和材料科学--代表了会议的知识内容，并对其作出了积极贡献。随着评估该领域和未来方向的机会，预计将在大学、研究机构和工业之间建立新的联系。%评估半导体/绝缘体接口和相关器件问题的进展和现状，以及对最重要的发展的当前评估，将对理解和加强电子材料在计算、数据处理和通信中的利用具有重要价值。***

A conference on semiconductor/insulator interfaces, and the interaction between materials science, device physics, and technology will be held December 4-6, 2003 in Arlington, VA. The conference is interdisciplinary, and will cover many areas of MOS science and technology, including: alternative and high-k gate dielectric materials; physics of thin dielectrics and their interfaces; gate-dielectric conduction and breakdown; silicon carbide and its interfaces; physical and electrical characterization of si/sio2 interfaces; micro-roughness measurement, modeling, and device-related effects; hot carrier, plasma damage and radiation effects; nitrogen-containing oxides and stacked interfaces; surface cleaning technology and effects on dielectrics and interfaces; novel oxidation, deposition, and etching techniques; and theory of oxide and interface defects.An important goal of the conference is to provide an environment that encourages interplay between scientific and technological issues. The program is organized as a workshop-style conference to provide a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. Objectives are to stimulate communications among the broad community of researchers addressing semiconductor/insulator interfaces and their relationship to technology. A variety of disciplinary backgrounds-chemistry, physics, engineering and materials science, is represented and contrributes positively to the intellectual content of the Conference. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry.%%%An evaluation of the progress and status of semiconductor/insulator interfaces and related device issues along with current assessments of the most important developments will be of significant value to the understanding and enhanced utilization of electronic materials in computing, data processing, and communications. ***