US-Ireland collaborative research on Future Oxides and Channel materials for Ultimate Scaling (FOCUS)

摘要：robert M. Wallace，德克萨斯大学达拉斯分校“该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的”国际合作项目？未来的氧化物和通道材料的终极缩放（FOCUS）？美国，爱尔兰和北爱尔兰调查员之间的关系该项目将研究用于高性能集成电路的先进材料的化学、结构和电学特性。该项目将利用都柏林城市大学（DCU）的研究人员的独特专业知识和能力。英国贝尔法斯特大学（QUB）、科克大学学院（Tyndall）的廷德尔国家研究所（Tyndall National Institute）和德克萨斯大学达拉斯分校（UTD）。研究的重点是先进、高性能的核心集成电路。晶体管栅极堆栈？并研究了三个关键器件组件的基本影响：(1)表面钝化，(2)Ge和III-V高k MOS栅极堆叠的制造，以及(3)Ge和III-V表面沟道mosfet中的载流子迁移率测量。研究人员将使用独特的、最先进的原位和非原位表征技术的组合来检查高z硫族化合物（Se和Te），从而在亚纳米尺度上对器件表面和界面有一个基本的了解。除了这些钝化表面的物理化学研究外，器件应用的性能将通过电容器和晶体管器件的制造进行电学评估。这些研究人员还将参与各种活动，旨在向科学和技术管道中的学生阐明研究的兴奋之处。

Abstract: Proposal #0925844Robert M. Wallace, University of Texas at Dallas"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)"An international collaboration project ?Future Oxides and Channel materials for Ultimate Scaling (FOCUS)? between US, Ireland and Northern Ireland investigators is established. The project will investigate the chemical, structural, and electrical properties of advanced materials for high performance integrated circuits. The project will employ the unique expertise and capabilities of researchers at Dublin City University (DCU), Queen?s University Belfast (QUB), the Tyndall National Institute at University College Cork (Tyndall), and the University of Texas at Dallas (UTD). The research focuses on the heart of advanced, high performance integrated circuits ? the transistor gate stack ? and examines the fundamental impact of three key device components: (1) surface passivation, (2) fabrication of Ge and III-V high-k MOS gate stacks, and (3) carrier mobility measurements in Ge and III-V surface channel MOSFETs. The investigators will examine high-Z chalcogenides (Se and Te) using a combination of unique, state-of-the-art in-situ and ex-situ characterization techniques, resulting in a fundamental understanding of the device surfaces and interfaces at the sub-nanometer scale. In addition to physicochemical investigations of these passivated surfaces, the performance for device applications will be evaluated electrically through the fabrication of capacitor and transistor devices. These investigators will also contribute to various activities aimed at articulating the excitement of the research to students in the science and technology pipeline.