US-Ireland collaborative research on Future Oxides and Channel materials for Ultimate Scaling (FOCUS)

翻译后摘要：提案#0925844Robert M.华莱士，德克萨斯大学达拉斯分校“这个奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的“一个国际合作项目？用于最终缩放的未来氧化物和通道材料（FOCUS）？美国、爱尔兰和北方爱尔兰的研究者之间建立了一个联系。 该项目将研究用于高性能集成电路的先进材料的化学，结构和电气特性。该项目将采用独特的专业知识和能力的研究人员在都柏林城市大学（DCU），皇后？美国贝尔法斯特大学（QUB）、科克大学学院的廷德尔国家研究所（廷德尔）和德克萨斯大学达拉斯分校（UTD）。 该研究的重点是先进的，高性能集成电路的心脏？晶体管栅极叠层？并研究了三个关键器件组件的基本影响：（1）表面钝化，（2）Ge和III-V族高k MOS栅极叠层的制造，以及（3）Ge和III-V族表面沟道MOSFET的载流子迁移率测量。研究人员将使用独特的，最先进的原位和非原位表征技术的组合来检查高Z硫属化物（Se和Te），从而对亚纳米尺度的器件表面和界面有了基本的了解。 除了这些钝化表面的物理化学研究，器件应用的性能将通过电容器和晶体管器件的制造进行电气评估。 这些研究人员还将为旨在向科学和技术管道中的学生阐明研究兴奋的各种活动做出贡献。

Abstract: Proposal #0925844Robert M. Wallace, University of Texas at Dallas"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)"An international collaboration project ?Future Oxides and Channel materials for Ultimate Scaling (FOCUS)? between US, Ireland and Northern Ireland investigators is established. The project will investigate the chemical, structural, and electrical properties of advanced materials for high performance integrated circuits. The project will employ the unique expertise and capabilities of researchers at Dublin City University (DCU), Queen?s University Belfast (QUB), the Tyndall National Institute at University College Cork (Tyndall), and the University of Texas at Dallas (UTD). The research focuses on the heart of advanced, high performance integrated circuits ? the transistor gate stack ? and examines the fundamental impact of three key device components: (1) surface passivation, (2) fabrication of Ge and III-V high-k MOS gate stacks, and (3) carrier mobility measurements in Ge and III-V surface channel MOSFETs. The investigators will examine high-Z chalcogenides (Se and Te) using a combination of unique, state-of-the-art in-situ and ex-situ characterization techniques, resulting in a fundamental understanding of the device surfaces and interfaces at the sub-nanometer scale. In addition to physicochemical investigations of these passivated surfaces, the performance for device applications will be evaluated electrically through the fabrication of capacitor and transistor devices. These investigators will also contribute to various activities aimed at articulating the excitement of the research to students in the science and technology pipeline.