US-Ireland collaborative research on Future Oxides and Channel materials for Ultimate Scaling (FOCUS)

摘要：提案#0925844德克萨斯大学达拉斯分校罗伯特·M·华莱士“这个奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的”一个国际合作项目？未来氧化物和最终规模的渠道材料(焦点)？美国、爱尔兰和北爱尔兰调查人员之间的关系已经确立。该项目将研究用于高性能集成电路的先进材料的化学、结构和电气性能。该项目将利用都柏林城市大学、贝尔法斯特S皇后大学、廷德尔大学科克分校(廷德尔)和德克萨斯大学达拉斯分校(UTD)的研究人员的独特专业知识和能力。这项研究集中在先进、高性能集成电路的核心？晶体管栅极堆叠？并考察了三个关键器件组件的基本影响：(1)表面钝化，(2)Ge和III-V高k MOS栅堆栈的制造，以及(3)Ge和III-V表面沟道MOSFET中载流子迁移率的测量。研究人员将使用独特的、最先进的原位和非原位表征技术相结合的方法来研究高Z硫化物(Se和Te)，从而在亚纳米尺度上对器件表面和界面有一个基本的了解。除了对这些钝化表面进行物理化学研究外，还将通过电容器和晶体管器件的制造来评估器件应用的性能。这些研究人员还将参与各种活动，旨在向正在进行科学技术研究的学生阐明研究的兴奋之处。

Abstract: Proposal #0925844Robert M. Wallace, University of Texas at Dallas"This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)"An international collaboration project ?Future Oxides and Channel materials for Ultimate Scaling (FOCUS)? between US, Ireland and Northern Ireland investigators is established. The project will investigate the chemical, structural, and electrical properties of advanced materials for high performance integrated circuits. The project will employ the unique expertise and capabilities of researchers at Dublin City University (DCU), Queen?s University Belfast (QUB), the Tyndall National Institute at University College Cork (Tyndall), and the University of Texas at Dallas (UTD). The research focuses on the heart of advanced, high performance integrated circuits ? the transistor gate stack ? and examines the fundamental impact of three key device components: (1) surface passivation, (2) fabrication of Ge and III-V high-k MOS gate stacks, and (3) carrier mobility measurements in Ge and III-V surface channel MOSFETs. The investigators will examine high-Z chalcogenides (Se and Te) using a combination of unique, state-of-the-art in-situ and ex-situ characterization techniques, resulting in a fundamental understanding of the device surfaces and interfaces at the sub-nanometer scale. In addition to physicochemical investigations of these passivated surfaces, the performance for device applications will be evaluated electrically through the fabrication of capacitor and transistor devices. These investigators will also contribute to various activities aimed at articulating the excitement of the research to students in the science and technology pipeline.