SBIR Phase I: An Efficient, Linear, Free Radical Source for Compound Thin Film Deposition

SBIR 第一阶段：用于化合物薄膜沉积的高效、线性、自由基源

• 批准号: 0419802
• 负责人: Sheyu Guo
• 金额: $ 9.99万
• 依托单位: Energy Photovoltaics, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-07-01 至 2004-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0419802&HistoricalAwards=false
• 关键词: SBIR; Phase; Efficient; Linear; Free

This Small Business Innovation Research Phase I project will develop an efficient and flexible device to produce a neutral, linearly-extended, free radical flux for photovoltaic and semiconductor industry applications. This source can produce atomic chalcogen species (sulfur, selenium, tellurium) and other types of free radicals (such as atomic oxygen, hydrogen, nitrogen or chlorine) for formation of various compound thin films by reactive methods. The project objectives are to increase the chalcogen utilization efficiency, to reduce equipment maintenance cost and to offer higher deposition rate and lower substrate temperature without film quality reduction. The source is flexible, can run over a great range of process parameters, and can be incorporated into many kinds processes such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), evaporation or sputtering for reactive thin film deposition. Most importantly, this source can increase the production efficiency of Cu(In,Ga)Se2 (CIGS) and CdTe thin films, which are the next generation of solar energy absorbers.

这个小型企业创新研究第一阶段项目将开发一种高效和灵活的设备，以生产用于光伏和半导体行业应用的中性、线性扩展的自由基助剂。这种源可以产生原子硫族物种(硫、硒、碲)和其他类型的自由基(如原子氧、氢、氮或氯)，以通过反应方法形成各种化合物薄膜。该项目的目标是提高硫化物的利用率，降低设备维护成本，并在不降低薄膜质量的情况下提供更高的沉积速率和更低的衬底温度。该源结构灵活，工艺参数范围广，可用于金属有机化学气相沉积(MOCVD)、分子束外延(MBE)、蒸发或溅射等多种工艺。最重要的是，该光源可以提高下一代太阳能吸收材料--铜(In，Ga)Se2(CIGS)和CdTe薄膜的生产效率。