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STTR Phase II: Rapid Nondestructive Residual Stress Characterization of Semiconductor Materials

STTR Phase II: Rapid Nondestructive Residual Stress Characterization of Semiconductor Materials
STTR 第二阶段:半导体材料的快速无损残余应力表征
批准号:
0450604
负责人:
Jon Lesniak
金额:
$49.44万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-06-15 至 2007-05-31

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中文摘要
翻译
这个小企业技术转让(STTR)第二阶段研究项目旨在为微电子行业引入一系列仪器,以实现快速,高分辨率的残余应力检测,缺陷定位和量化。在硅晶片制造中,小裂纹可能出现在晶片工艺的开始,并且必须定位以避免对受损晶片增加价值。在半导体晶片键合中,脱键缺陷可能由捕获的灰尘颗粒和气泡引起,从而导致可靠性和性能下降。红外灰场偏光镜能够定位这些缺陷,并使用基于实验室的系统量化残余应力状态。现在,这项技术将与优化的探测器连接,以提高缺陷分辨率,并引入显微镜平台,以改善对较小缺陷的检测。最后,这些应力分析工具将被集成到一个自动化的检查系统,将适用于上述缺陷的在线检查。许多设备和工艺的盈利能力可能会受到低工艺产量的严重阻碍。通过立即捕捉应力变化的工艺控制工具可以提高成品率,通过实施经济实惠的100%检测来消除所有损坏的器件,可以提高客户满意度和器件可靠性。除了使我们国家的微电子行业更具竞争力外,该工具还将通过提高分辨率极限来促进科学知识的发展,并为研究半导体衬底,晶片键合,MEMS和集成电路的研究人员提供定量测量。
英文摘要
This Small Business Technology Transfer (STTR) Phase II research project aims to introduce a series of instruments to the microelectronics industry that allow rapid, high resolution residual stress inspection, defect location and quantification. In silicon wafer manufacture, small cracks may appear at the beginning of the wafer process and must be located to avoid adding value to damaged wafers. In semiconductor wafer bonding, de-bond defects may result from trapped dust particles and gas bubbles resulting in reliability and performance degradation. The infrared grey-field polariscope was able to locate these defects and quantify the residual stress state using a laboratory-based system. Now, this technology will be interfaced with optimized detectors to improve defect resolution and introduced onto a microscope platform to improve inspection of smaller defects. Finally, these stress analysis tools will be integrated into an automated inspection system that will be applicable to on-line inspection of the above-mentioned defects. The profitability of many devices and processes can be significantly hindered by low process yields. Yields can be improved with process control tools that catch stress variations immediately, and customer satisfaction and device reliability improvements made by implementing affordable 100% inspection to eliminate all damaged devices. In addition to making our nation's microelectronics industry more competitive, this tool will advance the state of scientific knowledge by improving resolution limits and provide quantitative measurements for researchers who study semiconductor substrates, wafer bonding, MEMS and integrated circuits.
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STTR Phase I: Rapid, Nondestructive Residual Stress Characterization of Semiconductor Materials
  • 批准号:
    0319448
  • 项目类别:
    Standard Grant
  • 资助金额:
    $9.54万
  • 财政年份:
    2003
  • 负责人:
    Jon Lesniak
  • 依托单位:
国内基金
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  • 项目类别:
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  • 资助金额:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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  • 依托单位:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
    12.0万元
  • 批准年份:
    2018
  • 负责人:
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  • 依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究