NIRT: Metal-Dielectric Interfaces at the Nanoscale for Quantum Information and Microwave Devices

将开发一个多学科项目，以了解金属-介电界面并提高用于量子信息和微波器件的绝缘材料的质量。该项目将使用原位外延金属/介电结构，这将使生长良好控制，干净的界面，减少缺陷密度，从而允许对界面的基本理解。该方法的核心是基于超导的新工具，能够分析金属介电结构中甚至微小的损耗机制和先进的透射电子显微镜技术。这些方法的结合将允许建立设备性能和原子结构之间的直接关联，这将指向优化材料，界面和制造方法的最有效方法。该计划将在许多方面影响电子产品，使设备的开发更复杂，更快，更安静。在纳米尺度上理解材料的基础科学将为发明全新类型的设备打开大门，其中一个例子就是建造量子计算机，它将比现在的计算机强大得多。

NIRT: Metal-Dielectric Interfaces at the Nanoscale for Quantum Information and Microwave Devices AbstractA multidisciplinary program will be developed to understand the metal-dielectric interface and improve the quality of insulating materials for use in quantum information and microwave devices. The project will use in-situ epitaxial metal/dielectric structures that will enable the growth of well-controlled, clean interfaces with a reduced defect density to allow for a fundamental understanding of the interface. Central to the approach are new tools based on superconductivity capable of analyzing even minute loss mechanisms in metal-dielectric structures and advanced transmission electron microscopy techniques. The combination of these methods will allow the establishment of a direct correlation between device performance and atomic structure, which will point to the most efficient method for the optimization of materials, interfaces and fabrication methodsThis program will impact electronics in a number of ways, enabling the development of devices that are more complex, faster, and quieter. Understanding the basic science of materials at the nanoscale will open up for invention entirely new classes of devices, an example of which is the construction of a quantum computer that would be vastly more powerful than present day computers.