Carrier and Spin Dynamics in InSb- and InMnSb- Based Heterostructures

InSb 和 InMnSb 基异质结构中的载流子和自旋动力学

• 批准号: 0507866
• 负责人: Giti Khodaparast
• 金额: --
• 依托单位: Virginia Polytechnic Institute and State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-15 至 2010-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0507866&HistoricalAwards=false
• 关键词: Carrier; Spin; Dynamics; InSb; InMnSb

Non TechnicalIn analogy with the early development of semiconductor electronics, there is now a rapidly growing interest in the science and engineering of low-dimensional magnetic and narrow gap semiconductors. Narrow gap and magnetic semiconductors have the potential to lead to revolutionary spintronic devices in which the spin degree of freedom in addition to the charge can be used and manipulated. The expected advantages using spin-based devices include increasing data processing speed and integration densities, decreasing electric power consumption, and nonvolatility. The focus of this project is to study unexplored optical and magneto-optical properties of InSb-based narrow gap heterostructures and ferromagnetic structures such as InMnSb, with an emphasis on charge and spin dynamics using laser spectroscopic techniques. The proposed activities will train undergraduate and graduate researchers in frontier scientific projects to educate next generation experts in semiconductor optics with broad knowledge in quantum optics, laser spectroscopy, and nanotechnology to prepare them for a productive and exciting future in the fast growing technological world.Technical:In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors such as InSb based heterostructures. Narrow gap semiconductors offer several scientifically unique features such as a small effective mass, a large g-factor, a high intrinsic mobility, and large spin-orbit coupling. In semiconductors with large spin-orbit interaction the coupling of electron spin polarization with electric fields or currents can provide new opportunities for spin manipulation in electronic and optoelectronic devices. The goal of this project is to study unexplored optical properties of InSb-based quantum wells and the newest member of III-V ferromagnetic structures, InMnSb, with an emphasis on dynamical aspects. The objectives in this project are to: understand charge/spin dynamics in narrow gap structures, probe the effect of magnetic impurities on the spin/charge dynamics, and develop concepts for spin based device applications. The approach at Virginia Tech is to employ ultrafast laser spectroscopy techniques, such as pump-probe and magneto-optical Kerr/Faraday effect to exploit the unique features in these structures. The proposed research work will train undergraduate and graduate researchers with a strong background in material science, laser spectroscopy, and nanoscience.

与半导体电子学的早期发展类似，现在人们对低维磁性和窄能隙半导体的科学和工程兴趣迅速增长。窄能隙和磁性半导体有可能导致革命性的自旋电子器件，在这种器件中，除了电荷之外，自旋自由度还可以使用和操纵。使用基于自旋的设备的预期优势包括提高数据处理速度和集成密度、降低电力消耗和非易失性。本项目的重点是研究InSb基窄禁带异质结构和铁磁结构(如InMnSb)的未被探索的光学和磁光性质，重点是利用激光光谱技术研究电荷和自旋动力学。拟议的活动将培养前沿科学项目的本科生和研究生研究人员，以培养具有量子光学、激光光谱学和纳米技术方面广泛知识的下一代半导体光学专家，为他们在快速发展的技术世界中取得丰硕和令人兴奋的未来做好准备。技术：随着人们对自旋相关现象和器件的兴趣日益浓厚，现在人们对诸如InSb基异质结构等窄禁带半导体的科学和工程重新产生了兴趣。窄禁带半导体具有几个独特的科学特性，如小有效质量、大g因子、高本征迁移率和大的自旋-轨道耦合。在具有大的自旋-轨道相互作用的半导体中，电子自旋极化与电场或电流的耦合可以为电子和光电子器件中的自旋操纵提供新的机会。本项目的目标是研究基于InSb的量子阱和III-V铁磁结构的最新成员InMnSb的未被探索的光学性质，重点是动力学方面。这个项目的目标是：了解窄禁带结构中的电荷/自旋动力学，探索磁性杂质对自旋/电荷动力学的影响，并为基于自旋的器件应用开发概念。弗吉尼亚理工大学的方法是使用超快激光光谱技术，如泵浦-探测和磁光克尔/法拉第效应，以利用这些结构中的独特特征。拟议的研究工作将培养具有材料科学、激光光谱学和纳米科学方面强大背景的本科生和研究生研究人员。