Electronic structure of buried layers and interfaces investigated by high energy photoemission and X-ray magnetic circular dichroism

高能光电和X射线磁圆二色性研究埋层和界面的电子结构

• 批准号: 172520233
• 负责人: Dr. Gerhard H. Fecher
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/172520233?language=en
• 关键词: Electronic; structure; buried; layers; interfaces

This project will produce thin films of advanced spintronic materials and performs in-situ investigation by photoelectron spectroscopy. The investigation of the bulk electronic structure by photoemission is already challenging and even higher demands occur in the case of buried layers and interfaces. Photoemission with hard X-ray excitation (HAXPES) in combination with spin resolution is, at present, the only method that is able to solve that problem for spintronic materials. HAXPES will be used to investigate the electronic structure of buried layers, interfaces, and devices. The in-situ study of the thin films allows to investigate the electronic structure step-by-step during the growth of devices (eg. for CPP-GMR) to optimize their physical properties. Besides the materials used in other groups of ASPIMATT (e.g.: Co2YZ) new tetragonal Heusler compounds (e.g.: Mn2xYGa, Y=Fe, Pt) with perpendicular anisotropy will be investigated. The combination of thin film production with HAXPES in a laboratory system will allow the in-situ investigation of the electronic structure. High resolution valence band spectroscopy of the materials will be performed at synchrotron facilities.

该项目将生产先进的自旋电子材料薄膜，并通过光电子能谱进行原位研究。通过光电发射研究体电子结构已经具有挑战性，在埋层和界面的情况下甚至会出现更高的要求。硬X射线激发光电子发射（HAXPES）结合自旋分辨是目前唯一能够解决自旋电子材料问题的方法。HAXPES将用于研究埋层、界面和器件的电子结构。薄膜的原位研究允许在器件的生长过程中逐步研究电子结构（例如，用于CPP-GMR）以优化它们的物理性质。除了ASPIMATT其他组别中使用的材料（例如：Co2 YZ）新的四氢Heusler化合物（例如：Mn_（2x）YGa，Y=Fe，Pt）的垂直各向异性。在实验室系统中将薄膜生产与HAXPES相结合，将允许对电子结构进行原位调查。材料的高分辨率价带光谱将在同步加速器设施中进行。