SBIR Phase I: Reduction Of The Critical Current In Spin Transfer Switching Through Anisotropy Engineering

SBIR 第一阶段：通过各向异性工程降低自旋转移切换中的临界电流

• 批准号: 0538973
• 负责人: Alex Panchula
• 金额: $ 9.44万
• 依托单位: Grandis, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0538973&HistoricalAwards=false
• 关键词: SBIR; Phase; Reduction; Critical; Current

This Small Business Innovation Research (SBIR) Phase I project addresses decreasing the Spin Transfer Switching (STS) critical current through the innovative application of magnetic materials. STS allows for the manipulation of the magnetic order parameter of nano-scale ferromagnets without the use of external magnetic fields and is recognized as a key component for scalability of magnetic random access memory (MRAM). One of the major technical barriers to realize practical spin dependent electronic devices based on STS is the large current needed for switching. One approach to reduce the STS critical current is to magnetically engineer ferromagnets to have precisely the characteristics needed to enable switching. This critical current has been reduced to 10^6 A/cm2, however, a further order of magnitude reduction is needed. Magnetically engineering the out-of-plane anisotropy of thin sub-micron ferromagnetic through further innovative materials research could lead to this reduction.Control of the magnetic anisotropy through innovative materials research has been studied but applying these to practical devices has not. Reduction of the STS critical current is vital to the enabling a spin-dependant electronic devices for storage, logic, and oscillator devices. These solid-state devices have the potential to drive improvements in electronics, and create an entire new sector of the semiconductor industry.

这个小企业创新研究（SBIR）第一阶段项目通过磁性材料的创新应用来降低自旋转移开关（STS）的临界电流。STS允许在不使用外部磁场的情况下操纵纳米级铁磁体的磁序参数，并且被认为是磁性随机存取存储器（MRAM）的可扩展性的关键部件。实现基于STS的实用自旋相关电子器件的主要技术障碍之一是开关所需的大电流。降低STS临界电流的一种方法是对铁磁体进行磁性工程设计，使其精确地具有实现切换所需的特性。该临界电流已降至10^6 A/cm 2，但还需要进一步降低一个数量级。通过进一步的创新材料研究，对薄亚微米铁磁材料的面外各向异性进行磁工程设计，可能会导致这种减少。通过创新材料研究控制磁各向异性已经研究过，但将其应用于实际设备还没有。STS临界电流的减小对于实现用于存储、逻辑和振荡器器件的自旋相关电子器件至关重要。这些固态器件有潜力推动电子产品的改进，并创造半导体行业的一个全新领域。