SBIR Phase I: A Novel Microwave Technique for Rapid Thermal Processing of Silicon Carbide Wide Bandgap Semiconductor

SBIR 第一阶段：碳化硅宽带隙半导体快速热处理的新型微波技术

• 批准号: 0539321
• 负责人: Yonglai Tian
• 金额: $ 10万
• 依托单位: LT Technologies
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539321&HistoricalAwards=false
• 关键词: SBIR; Phase; Novel; Microwave; Technique

This Small Business Innovation Research (SBIR) Phase I project involving a novel microwave technique for rapid thermal processing of silicon carbide wide bandgap semiconductors will develop a unique solid state microwave technique that can lower the sheet resistance and surface roughness of SiC semiconductors to unprecedented levels. Taking full advantage of the current state of the art solid state microwave technologies, The company will develop a prototype microwave unit for rapid thermal processing (RTP) of SiC with several innovations: (1) ultra-high heating rate up to 200-900 deg C/sec, (2) ultra-high temperature up to 2000 deg C, (3) easy and reliable process control by electronics and computer, (4) multivariable control for temperature uniformity and reproducibility, and (5) small dimension and convenient to be integrated into production lines. During Phase I, the prototype unit will be modified to meet special requirements for RTP of SiC. Microwave annealing of SiC implanted with donor and acceptor species will be performed at temperatures of 1700-1950 deg C and annealing time from a minute to a few seconds. Afterward, measurements of electrical properties will be conducted to determine feasibility and applicability. In Phase II, this technique will be extended to large size of SiC wafers for commercial applications.Commercially, the proposed technology can be easily deployed in commercial products for rapid thermal processing of SiC, GaN and CMOS. With such unparalleled high heating rate and high heating temperature, the technology can be extended to many other applications such as wafer bonding in IC, MEMS and optoelectronic packaging, as well as rapid thermal fabrication of advanced materials such as nano-materials and function materials.

这个小型企业创新研究（SBIR）第一阶段项目涉及一种用于碳化硅宽带隙半导体快速热处理的新型微波技术，将开发一种独特的固态微波技术，可以将SiC半导体的薄层电阻和表面粗糙度降低到前所未有的水平。 充分利用当前最先进的固态微波技术，该公司将开发一种用于SiC快速热处理（RTP）的原型微波装置，该装置具有以下几项创新：（1）超高加热速率，可达200-900 ℃/秒，（2）超高温，可达2000 ℃，（3）通过电子和计算机进行简单可靠的过程控制，（4）温度均匀性和重复性的多变量控制;（5）尺寸小，便于集成到生产线中。在第一阶段，原型装置将进行修改，以满足SiC RTP的特殊要求。注入施主和受主物质的SiC的微波退火将在1700-1950摄氏度的温度和从一分钟到几秒的退火时间下进行。之后，将进行电气性能的测量，以确定可行性和适用性。在第二阶段，这项技术将扩展到大尺寸的SiC晶片的商业应用。商业上，提出的技术可以很容易地部署在商业产品中，用于SiC，GaN和CMOS的快速热处理。凭借无与伦比的高加热速率和高加热温度，该技术可以扩展到许多其他应用，例如IC，MEMS和光电封装中的晶圆键合，以及纳米材料和功能材料等先进材料的快速热制造。