SBIR Phase I: Colloidal Quantum Dot Emitters for Deep Ultraviolet Light Emitting Diodes

SBIR 第一阶段：用于深紫外发光二极管的胶体量子点发射器

• 批准号: 0539624
• 负责人: Jennifer Pagan
• 金额: $ 10万
• 依托单位: Dot Metrics Technologies, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539624&HistoricalAwards=false
• 关键词: SBIR; Phase; Colloidal; Quantum; Dot

This Small Business Innovation Research Phase I research project seeks to develop a novel method of fabricating deep UV LEDs which will allow for wider wavelength ranges as well as provide higher efficiencies than current UV LED technologies. State of the art UV LEDs have wavelength ranges from 255nm to 365nm and are achieved through complex and expensive epitaxial growth of AlInGaN materials. External quantum efficiencies are low for these devices due to poor crystal quality, resulting in lower reliability and shorter lifetimes than visible LEDs. The objective of this project is to prove the feasibility of fabricating UV LEDs with a technique that includes the use of colloidal quantum dots and bypasses the need for complicated multiple quantum well epitaxial active layers. This method would reduce the effect the crystal quality has on external quantum efficiency. The ability to fabricate higher efficiency deep UV LEDs opens up a wide array of UV LEDs can be used for disinfection applications, such as air, water, and surfaces. These applications are currently being accomplished with expensive, short lifetime UV lamps or with environmentally harmful chemicals. LEDs provide a mechanism for disinfection that does not impact the environment, as well as offering longer lifetimes, and cost advantages. Security applications are also producing a growing market for UV LEDs. Emission in the deep UV range enables the development of non-line of sight communication devices as well as biological agent detection.

这个小型企业创新研究第一阶段研究项目旨在开发一种制造深紫外光LED的新方法，该方法将允许更宽的波长范围，并提供比当前UV LED技术更高的效率。最先进的紫外光LED的波长范围从255 nm到365 nm，是通过复杂而昂贵的AlInGaN材料外延生长实现的。由于晶体质量差，这些设备的外部量子效率较低，导致可靠性较低，寿命比可见LED短。该项目的目标是证明使用胶体量子点技术制造紫外光LED的可行性，并绕过复杂的多量子阱外延有源层。这种方法将减小晶体质量对外量子效率的影响。制造效率更高的深紫外光LED的能力开辟了广泛的紫外光LED阵列，可用于空气、水和表面等消毒应用。这些应用目前是通过昂贵的、寿命短的紫外线灯或有害环境的化学品来实现的。LED提供了一种不影响环境的消毒机制，并提供了更长的寿命和成本优势。安全应用也为紫外线LED创造了一个日益增长的市场。深紫外光的发射使非视距通信设备的开发以及生物制剂的检测成为可能。