SBIR Phase I: Zero-Remanence Tamper-Responsive Cryptokey Memory

SBIR 第一阶段：零剩磁防篡改加密密钥存储器

• 批准号: 0539675
• 负责人: James Deak
• 金额: $ 9.97万
• 依托单位: NVE CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539675&HistoricalAwards=false
• 关键词: SBIR; Phase; Zero; Remanence; Tamper

This Small Business Innovation Research (SBIR) project will develop an innovative non-volatile spintronic cryptographic key memory that can self-erase without data remanence in the event of tampering and without applied power. Magnetic Random Access Memory (MRAM) is the only technology with potential for this capability. Anti-tamper MRAM could be a major paradigm shift - memories used in ICs presently must be erased by overwriting or disconnection of a power source when tampering is detected. Research objectives include a micromagnetic study of MRAM bit shapes to eliminate data remanence after DC field erasure, finite elements simulation of the integrated system to determine optimal magnet/shield/die configurations, fabrication of spintronic anti-tamper memory cells, and red team analysis of the integrated device. This work will beaccomplished through use of spin-dependent tunneling fabrication and simulationresources. The anticipated result is a 1 kbit anti-tamper embedded MRAM design andfeasibility analysis.Commercially, this provides an extra layer of protection on IC-based assemblies such assmart cards, cash machines etc. In addition, the proposed program will render a systeminoperable in the event of physical tamper. This will be a very useful tool in stemmingthe tide of fraudulent usage or compromises of IC-based instruments as well as certaintypes of identify theft. Certain groups have targeted various research organizations andattempted to otherwise compromise their research through attacks on their computersystems. This would provide additional protection to the data. Identity theft has becomea very large issue for society in general and particularly in the more computerizedsocieties.

这个小型企业创新研究（SBIR）项目将开发一种创新的非易失性自旋电子密码密钥存储器，该存储器可以在篡改和不施加电源的情况下自擦除而不会残留数据。磁性随机存取存储器（MRAM）是唯一具有这种能力潜力的技术。防篡改MRAM可能是一个主要的范式转变-目前在IC中使用的存储器必须在检测到篡改时通过断电或断开电源来擦除。研究目标包括MRAM位形状的微磁研究，以消除直流场擦除后的数据剩磁，集成系统的有限元模拟，以确定最佳的磁铁/屏蔽/模具配置，制造自旋电子防篡改存储单元，和红队分析的集成设备。这项工作将通过使用自旋相关隧道制造和模拟资源来完成。预期的结果是一个1 kbit的防篡改嵌入式MRAM的设计和可行性分析。在商业上，这提供了一个额外的保护层的IC为基础的组件，如智能卡，自动取款机等。此外，拟议的计划将呈现一个系统不可操作的物理篡改的事件。这将是一个非常有用的工具，可以阻止欺诈性使用或基于IC的工具的妥协以及某些类型的身份盗窃。某些组织已经瞄准了各种研究机构，并试图通过攻击他们的计算机系统来破坏他们的研究。这将为数据提供额外的保护。身份盗窃已成为一个非常大的问题，为社会一般，特别是在更多的计算机化的社会.