SBIR Phase I: Nanoparticles Based Embedded Passive Capacitors (nCAPTM) for Enabling Advance Microelectronics Manufacturing

SBIR 第一阶段：基于纳米颗粒的嵌入式无源电容器 (nCAPTM)，用于实现先进的微电子制造

• 批准号: 0539820
• 负责人: Wenping Jiang
• 金额: --
• 依托单位: NANOMECH, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539820&HistoricalAwards=false
• 关键词: SBIR; Phase; Nanoparticles; Based; Embedded

This Small Business Innovation Research (SBIR) project will explore feasibility and demonstrateadvantages of the application of novel BaTiO3 nanoparticles based embedded decouplingcapacitors (nCAP) fabricated using electrostatic directed assembly of the nanoparticles. The state-of-the-art embedded capacitors are mostly microcomposites involving high dielectric materials such as BaTiO3 as filler dispersant in the epoxy polymer matrix. The dispersant particle size ranges from few-to-tens of microns, which limits the thickness of the embedded capacitor films. Moreover, due to the random arrangement of ferroelectric BaTiO3 particles, the overall dielectric constant is much closer to the very low value of the polymer (around 4) than the high-k filler (thousands). The electric field between the capacitor plates sees the dielectric as high and low phases in series, and capacitors in series have a lower overall value than either single capacitor. We propose to explore a unique electrostatic spray coating (ESC) method for the deposition of nanosized BaTiO3 particles dispersed in an epoxy polymer for oriented (layered) assembly of ferroelectric particles. In ESC process, nanoparticles are charged before deposition to activate directed self assembly of nanoparticles on metal ground plane of capacitor substrate. In this layered assembly, the electric field would see this arrangement as a high-k and a low-k phase in parallel, resulting in their values being added and allowing higher overall dielectric value. As an example, if the polymer phase were k = 4.6 (common FR4) and the ferroelectric powder phase k = 10,000, the overall dielectric constant of the design would be 5,000-7,000. Also, the use of nanosized dispersant ceramic will assist in processing these composites in thinner films. The nCAPTM will be deposited on metal-coated epoxy polymer substrates, which are of key interest to our manufacturing partner DuPont Corporation, a leading US manufacturer of microelectronics packaging materials.Commercially, if successful, this nCAP innovation will aid manufactures ofelectronics packages materials in overcoming limitations currently offered due to lowdielectric properties. The proposed project will advance the state-of-the-art for the fabrication of passive devices. A successful outcome will further the trend to smaller, more powerful electronic devices. The societal impact includes possible benefits such as improved communication systems, portable medical devices and many other consumer and strategic applications such as biomedical, portable data assistants and laptops, wireless communication, energy storage, etc.

这个小企业创新研究（SBIR）项目将探索可行性和示范的应用新型钛酸钡纳米粒子为基础的嵌入式双列电容器（nCAP）的优势，制造使用静电定向组装的纳米粒子。最先进的嵌入式电容器大多是微复合材料，涉及高介电材料，如钛酸钡作为环氧树脂聚合物基体中的填料分散剂。分散剂的粒径范围从几微米到几十微米，这限制了嵌入式电容器膜的厚度。此外，由于铁电BaTiO 3颗粒的随机排列，整体介电常数比高k填料（数千）更接近聚合物的非常低的值（约4）。电容器板之间的电场将电介质视为串联的高相和低相，并且串联的电容器具有比任一单个电容器更低的总值。我们建议探索一种独特的静电喷涂（ESC）方法沉积纳米钛酸钡粒子分散在环氧聚合物的铁电粒子的定向（分层）组装。在ESC工艺中，纳米颗粒在沉积之前被充电以激活纳米颗粒在电容器基板的金属接地平面上的定向自组装。在这种分层组件中，电场将把这种布置视为并联的高k和低k相，导致它们的值相加并允许更高的总介电值。作为示例，如果聚合物相为k = 4.6（常见的FR 4）并且铁电粉末相为k = 10，000，则设计的总介电常数将为5，000 - 7，000。此外，纳米分散剂陶瓷的使用将有助于以更薄的膜处理这些复合材料。nCAPTM将沉积在金属涂层环氧聚合物基底上，这是我们的制造合作伙伴杜邦公司（美国领先的微电子封装材料制造商）的主要兴趣。从商业角度来看，如果成功，这项nCAP创新将帮助电子封装材料制造商克服目前由于低介电性能而带来的限制。拟议的项目将推进无源器件制造的最先进水平。一个成功的结果将进一步推动更小，更强大的电子设备的趋势。社会影响包括可能的好处，如改进的通信系统，便携式医疗设备和许多其他消费者和战略应用，如生物医学，便携式数据助理和笔记本电脑，无线通信，能量存储等。