Rate Effects on the Material and Interfacial Failure of Thin Films From Static to Dynamic Loading

从静态加载到动态加载对薄膜材料和界面失效的速率影响

• 批准号: 0555787
• 负责人: John Lambros
• 金额: $ 28万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-08-15 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0555787&HistoricalAwards=false
• 关键词: Rate; Effects; Material; Interfacial; Failure

Abstract for CMS-0555787The recent widespread deployment of Microelectromechanical Systems (MEMS) has allowed for sufficient progress in studies focusing on the static and low/high cycle fatigue failure of rate insensitive materials such as polysilicon. However, far less is known about the response of polysilicon to impact loading. Furthermore, although metallic MEMS devices have become important in various critical applications, their significant strain rate sensitivity has not been explored, leading to a lack of understanding of the fundamental mechanical behavior required to develop reliable devices. This project will pursue an in depth investigation of the failure of polysilicon thin films over the entire spectrum loading rates from quasistatic to dynamic. Furthermore, experimentation on thin film metallic materials for MEMS will also be conducted to unravel the physical mechanisms of deformation and failure occurring at each time scale.

CMS-0555787摘要最近微机电系统（MEMS）的广泛部署使得专注于速率不敏感材料（如多晶硅）的静态和低/高周疲劳失效的研究取得了足够的进展。然而，对多晶硅对冲击载荷的响应知之甚少。此外，尽管金属MEMS器件在各种关键应用中变得重要，但尚未探索其显著的应变率敏感性，导致对开发可靠器件所需的基本机械行为缺乏了解。本计画将深入研究多晶硅薄膜在从准静态到动态的整个加载速率范围内的失效。此外，还将进行MEMS薄膜金属材料的实验，以揭示在每个时间尺度上发生变形和失效的物理机制。