SBIR Phase I: Development of Efficient Short-Wavelength Radiation Sources For Next-Generation Lithography

SBIR 第一阶段：开发用于下一代光刻的高效短波长辐射源

• 批准号: 0610632
• 负责人: Joseph MacFarlane
• 金额: $ 10万
• 依托单位: Hyperion Scientific, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-07-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0610632&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Efficient; Short

This Small Business Innovation Research (SBIR) Phase I project will pursue the development of novel plasma technologies for creating highly efficient, short-wavelength radiation sources for use in next generation semiconductor chip manufacturing. The development of plasma radiation sources that efficiently emit light at wavelengths near 13.5 nm is crucial to the expected emergence of EUV lithography as the primary technique used in manufacturing integrated circuits and DRAM near the end of this decade. Well-tested state-of-the-art plasma simulation tools and atomic physics databases will be applied to guide the development of highly efficient laser-produced plasma (LPP) radiation sources. Simulations will be used to identify promising laser beam parameters and target compositions that very efficiently emit light at 13.5 nm. In concert with this, experiments will be conducted to diagnose the characteristics of potential high conversion efficiency plasma sources, and to develop techniques for utilizing these sources in EUV lithography systems. Commercially, this project will lead to lower cost, more efficient, and more robust EUV lithography light sources for use in the manufacturing of next-generation semiconductor chips. Additionally, this project will lead to the development of techniques applicable tothe production of short-wavelength radiation sources for use in the fields of medical and defensetechnology.

该小型企业创新研究（SBIR）第一阶段项目将致力于开发新型等离子体技术，以创建用于下一代半导体芯片制造的高效短波长辐射源。有效发射波长接近13.5 nm的光的等离子体辐射源的开发对于EUV光刻作为本世纪末制造集成电路和DRAM的主要技术的预期出现至关重要。经过充分测试的最先进的等离子体模拟工具和原子物理数据库将被应用于指导高效激光产生等离子体（LPP）辐射源的开发。模拟将用于确定有前途的激光束参数和目标成分，非常有效地发射13.5 nm的光。与此相一致，将进行实验以诊断潜在的高转换效率等离子体源的特性，并开发用于在EUV光刻系统中利用这些源的技术。在商业上，该项目将导致更低的成本，更高效，更强大的EUV光刻光源用于制造下一代半导体芯片。此外，该项目将导致适用于生产医疗和国防技术领域使用的短波长辐射源的技术的发展。