SBIR Phase I: Enhanced Plasma deposition Process for MgO-Based Magnetic Tunnel Junctions with 500% Magnetoresistance

SBIR%20Phase%20I:%20Enhanced%20Plasma%20deposition%20Process%20for%20MgO-Based%20Magnetic%20Tunnel%20Junctions%20with%20500%%20磁阻

• 批准号: 0610712
• 负责人: Xiaoyong Liu
• 金额: $ 10万
• 依托单位: MICRO MAGNETICS INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-07-01 至 2006-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0610712&HistoricalAwards=false
• 关键词: SBIR; Phase; Enhanced; Plasma; deposition

This Small Business Innovation Research (SBIR) Phase I project aims to demonstrate thefeasibility of fabricating high quality MgO-based magnetic tunnel junction (MTJ) deviceswith magnetoresistance (MR) values of over 500%, via an innovative process whichutilizes optimized plasma-based magnetron sputtering and RF plasma oxidation. We willuse a number of novel methods to fabricate highly symmetrical, near epitaxial MgObarriers with (001)-orientation using plasma sputtering and oxidation methods. Usingthese methods, we will be able to realize a smoother barrier and the resulting process willbe suitable for adaptation to large-scale production with high yield and uniformity. Ourmethod combines three innovations. First, we will design a new deposition procedure tomake symmetrical interfaces on both sides of the MgO barrier to enhance the coherenttunneling effect required for high MR. Secondly, we will improve the (001) texture of theMgO barrier by choosing ferromagnetic layers with a composition tuned for both highspin polarization and small lattice mismatch. Finally, we will implement a new plasmaoxidation method to minimize both plasma damage to the barrier and MTJ interfaceroughness. If successful, the resulting MgO-based MTJ devices will surpass theperformance of all other existing magnetoresistive devices.Commercially, this technology will have a huge commercial impact on the non-volatile memory specifically, for MRAM (magnetic random access memory) and disk drive for tunnel magnetoresistance (TMR) read/write heads industries. The success of the project will not only bolster the market position of MRAM and MTJ read heads, but will also enable innovative new products in other market segments, such as semiconductor failureanalysis and a wide range of emerging bio-magnetic applications.

该小型企业创新研究（SBIR）第一阶段项目旨在证明通过优化等离子体磁控溅射和RF等离子体氧化的创新工艺制造高质量MgO基磁性隧道结（MTJ）器件的可行性，其磁阻（MR）值超过500%。我们将使用一些新颖的方法来制作高度对称的，近外延的（001）取向的MgO势垒，使用等离子体溅射和氧化方法。利用这些方法，我们将能够实现更平滑的屏障，并且所得到的工艺将适合于大规模生产，具有高产率和均匀性。我们的方法结合了三项创新。首先，我们将设计一个新的沉积过程，使对称的界面两侧的MgO势垒，以提高所需的高MR的相干共振效应。其次，我们将改善（001）织构的theMgO势垒通过选择铁磁层的组合物调整为高自旋极化和小的晶格失配。最后，我们将实施一种新的等离子体氧化方法，以尽量减少等离子体损伤的障碍和MTJ界面粗糙度。如果成功的话，所得到的基于MgO的MTJ器件的性能将超过所有其他现有的磁阻器件。在商业上，这项技术将对非易失性存储器产生巨大的商业影响，特别是对于MRAM（磁性随机存取存储器）和用于隧道磁阻（TMR）读/写头的磁盘驱动器行业。该项目的成功不仅将巩固MRAM和MTJ读取头的市场地位，还将使创新产品进入其他细分市场，如半导体故障分析和广泛的新兴生物磁性应用。