SBIR Phase I: Embedded Electron Charge for Macro Scale Devices

SBIR 第一阶段：用于大型器件的嵌入式电子电荷

• 批准号: 0637262
• 负责人: Michael Potter
• 金额: --
• 依托单位: Elecsci Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637262&HistoricalAwards=false
• 关键词: SBIR; Phase; Embedded; Electron; Charge

The Small Business Innovation Research (SBIR) Phase I project will expand the applicability of embedded electron charge technology by developing new techniques to store a large amount of electron charge at the interface of dissimilar insulators. Since electron injection using high electric fields will not work for thin films deposited on thick insulating substrates, alternative means must be developed for charge injection. Charge injection samples for this project will be fabricated by depositing alternating thin film layers of silicon dioxide and silicon nitride on thick fused silica substrates. The silicon nitride will be deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process, while the silicon dioxide will be deposited using several methods. The proposed technology will allow a much broader product scope with mid-to-macro size applications, far beyond the present limitations of embedded charge micro devices. Applications include energy harvesting for personal power from heel strike from walking, modules for providing power for sensors throughout a vehicular system, and eventually exoskeleton energy harvesters for converting body motion to usable electrical power, greatly benefiting both military and civilian users.

小企业创新研究（SBIR）第一阶段项目将通过开发新技术来扩大嵌入式电子电荷技术的适用性，以便在不同绝缘体的界面处存储大量电子电荷。 由于使用高电场的电子注入对于沉积在厚绝缘衬底上的薄膜不起作用，因此必须开发用于电荷注入的替代方法。本项目的电荷注入样品将通过在厚的熔融石英衬底上沉积二氧化硅和氮化硅的交替薄膜层来制造。 氮化硅将使用低压化学气相沉积（LPCVD）工艺沉积，而二氧化硅将使用几种方法沉积。拟议的技术将允许更广泛的产品范围与中到宏观尺寸的应用，远远超出了目前的限制嵌入式电荷微型器件。应用包括从行走的脚跟撞击中收集个人能量，为整个车辆系统的传感器提供电力的模块，以及最终将身体运动转换为可用电力的外骨骼能量采集器，极大地造福于军事和民用用户。