SBIR Phase I: High-Temperature Silicon-Carbide (SiC) Radio Frequency Wireless Transmitters

SBIR 第一阶段：高温碳化硅 (SiC) 射频无线发射器

• 批准号: 0638187
• 负责人: Roberto Schupbach
• 金额: --
• 依托单位: Arkansas Power Electronics International, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0638187&HistoricalAwards=false
• 关键词: SBIR; Phase; Temperature; Silicon; Carbide

This Small Business Innovation Research (SBIR) Phase I project will develop and commercialize silicon carbide (SiC) based radio frequency (RF) transmitters for high-temperature environments. The team will prove the feasibility of the concept and design through the successful demonstration of a SiC RF transmitter operating in excess of 450 degrees C. The electrical design for the RF transmitter will be developed, functionality of the design will be proven through low temperature silicon equivalent hardware and testing, critical high-temperature packaging issues will be investigated, and finally the SiC RF transmitter hardware will be fabricated and tested at 450 degrees C. If successful high-temperature transmitters will be key player in the power generation market as well as in the aerospace communities for use in jet turbines and rocket engines. This technology will also be a significant player in the automotive industry. The costs savings through improved performance and fuel savings could realistically exceed beyond hundreds of millions, or even billions of dollars.

这项小企业创新研究（SBIR）第一阶段项目将开发和商业化用于高温环境的基于碳化硅（SiC）的射频（RF）发射器。该团队将通过在超过450摄氏度下工作的SiC射频发射器的成功演示来证明概念和设计的可行性。射频发射器的电气设计将被开发，设计的功能将通过低温硅等效硬件和测试来证明，关键的高温封装问题将被调查。最后，SiC射频发射机硬件将在450摄氏度下制造和测试。如果成功，高温发射机将成为发电市场以及航空航天领域用于喷气涡轮机和火箭发动机的关键参与者。这项技术也将在汽车行业发挥重要作用。通过提高性能和节省燃料而节省的成本实际上可能超过数亿美元，甚至数十亿美元。