Electronic Properties of Oxide-Semiconductor Interfaces

技术：本项目是研究功能性复合氧化物-半导体界面的电学性质。预计这些界面将为基础科学研究和一系列新功能的新应用提供材料平台，这些新功能可能会影响完全耗尽的绝缘体上硅技术、硅的三维集成、高介电常数应用，以及可能在氧化物-半导体界面上的新沟道材料，包括磁性半导体系统。外延氧化物-半导体异质结构将使用氧化物分子束外延系统的原子层排序能力来生长。这些材料体系的结构和电子性质将用原子力显微镜、反射高能电子衍射、光电子能谱和X射线衍射来表征。将使用电阻率、迁移率、电容-电压、非弹性隧穿电子能谱和霍尔效应测量来研究电传输特性。此外，还将对掺锰氧化物半导体结构进行磁输运测量，包括磁阻、反常霍尔效应和平面霍尔效应的测量，以及磁光克尔效应和超导量子干涉器件的测量。非技术性：该项目解决了材料科学中具有高度技术相关性的专题领域的基础研究问题。氧化物-半导体界面有望为新的电子功能提供材料平台。该项目将在一个高度跨学科的领域提供研究生培训。此外，本课程将向本科生介绍分子束外延科学，该科学提供了系统地描述超薄膜外延生长细节的教学机会，包括使用原位衍射技术，使用原子吸收测量蒸发剂通量和沉积速率，以及根据原位测量确定相平衡。该项目将继续并扩大与工业公司、国家实验室和国际机构的现有合作。

Technical: This project is to study the electronic properties of functional complex oxide-semiconductor interfaces. These interfaces are expected to provide a materials platform for basic science studies and new applications for a range of new functionalities that can impact fully depleted silicon-on-insulator technology, three dimensional integration of silicon, high dielectric constant applications, as well as potentially new channel materials at oxide-semiconductor interfaces, including magnetic semiconductor systems. Epitaxial oxide-semiconductor heterostructures will be grown using the atomic layer sequencing capability of an oxide molecular beam epitaxy system. The structural and electronic properties of these material systems will be characterized using atomic force microscopy, reflection high energy electron diffraction, photoemission spectroscopy, and x-ray diffraction. Electrical transport properties will be studied using resistivity, mobility, capacitance-voltage, inelastic tunneling electron spectroscopy, and Hall effect measurements. In addition, magnetotransport measurements will be carried out on Mn-doped oxide-semiconductor structures, including magnetoresistance, anomalous Hall effect, and planar Hall effect measurements, along with magneto-optical Kerr effect and superconducting quantum interference device measurements. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The oxide-semiconductor interfaces are expected to provide a materials platform for new electronic functionalities. The project will provide graduate student training in a highly interdisciplinary area. In addition, it will introduce undergraduate students to the science of molecular beam epitaxy, which offers pedagogical opportunities to describe in a systematic fashion the details of epitaxial growth of ultrathin films, including the use of in situ diffraction techniques, the use of atomic absorption to measure evaporant fluxes and deposition rates, and the determination of phase equilibria from in situ measurements. The project will continue and expand existing collaborations with industrial companies, national laboratories, and international institutions.