Electronic Properties of Oxide-Semiconductor Interfaces

氧化物-半导体界面的电子特性

• 批准号: 0705799
• 负责人: Charles Ahn
• 金额: $ 22.59万
• 依托单位: Yale University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-07-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0705799&HistoricalAwards=false
• 关键词: Electronic; Properties; Oxide; Semiconductor; Interfaces

Technical: This project is to study the electronic properties of functional complex oxide-semiconductor interfaces. These interfaces are expected to provide a materials platform for basic science studies and new applications for a range of new functionalities that can impact fully depleted silicon-on-insulator technology, three dimensional integration of silicon, high dielectric constant applications, as well as potentially new channel materials at oxide-semiconductor interfaces, including magnetic semiconductor systems. Epitaxial oxide-semiconductor heterostructures will be grown using the atomic layer sequencing capability of an oxide molecular beam epitaxy system. The structural and electronic properties of these material systems will be characterized using atomic force microscopy, reflection high energy electron diffraction, photoemission spectroscopy, and x-ray diffraction. Electrical transport properties will be studied using resistivity, mobility, capacitance-voltage, inelastic tunneling electron spectroscopy, and Hall effect measurements. In addition, magnetotransport measurements will be carried out on Mn-doped oxide-semiconductor structures, including magnetoresistance, anomalous Hall effect, and planar Hall effect measurements, along with magneto-optical Kerr effect and superconducting quantum interference device measurements. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. The oxide-semiconductor interfaces are expected to provide a materials platform for new electronic functionalities. The project will provide graduate student training in a highly interdisciplinary area. In addition, it will introduce undergraduate students to the science of molecular beam epitaxy, which offers pedagogical opportunities to describe in a systematic fashion the details of epitaxial growth of ultrathin films, including the use of in situ diffraction techniques, the use of atomic absorption to measure evaporant fluxes and deposition rates, and the determination of phase equilibria from in situ measurements. The project will continue and expand existing collaborations with industrial companies, national laboratories, and international institutions.

技术：本项目旨在研究功能性复合氧化物-半导体界面的电子特性。这些界面有望为基础科学研究和一系列新功能的新应用提供材料平台，这些新功能可以影响完全耗尽绝缘体上硅技术，硅的三维集成，高介电常数应用以及氧化物半导体界面处的潜在新沟道材料，包括磁性半导体系统。外延氧化物-半导体异质结构将使用氧化物分子束外延系统的原子层排序能力来生长。这些材料系统的结构和电子特性将使用原子力显微镜，反射高能电子衍射，光电子能谱和X射线衍射进行表征。电输运特性将使用电阻率，迁移率，电容电压，非弹性隧穿电子能谱和霍尔效应测量进行研究。此外，将在Mn掺杂氧化物半导体结构上进行磁输运测量，包括磁阻、反常霍尔效应和平面霍尔效应测量，沿着磁光克尔效应和超导量子干涉器件测量。非技术性：该项目涉及材料科学专题领域的基础研究问题，具有高度的技术相关性。氧化物-半导体界面有望为新的电子功能提供材料平台。该项目将在一个高度跨学科的领域提供研究生培训。 此外，它将向本科生介绍分子束外延的科学，它提供了教学机会，以系统的方式描述外延生长的薄膜的细节，包括使用原位衍射技术，使用原子吸收测量蒸发通量和沉积速率，并从原位测量相平衡的测定。该项目将继续并扩大与工业公司、国家实验室和国际机构的现有合作。