SBIR Phase I: Abraisve Free Chemical Mechanical Planarization (AFCMP) Process for Next Generation Copper Interconnects
SBIR Phase I: Abraisve Free Chemical Mechanical Planarization (AFCMP) Process for Next Generation Copper Interconnects
批准号:
0712037
负责人:
Abhudaya Mishra
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-07-01 至 2008-03-31
中文摘要
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英文摘要
This small business innovation research (SBIR) Phase I project proposes the developmentof a novel abrasive-free recyclable copper CMP (AFCMP) recyclable process based onan unique patented iodine chemistry which leads to the formation of a soft, insolublecopper iodide layer on the surface of the copper. This layer can be gently removed by thepolishing pad without the need for particles in the slurry (abrasive-free slurry). Thisprocess is in contrast to conventional CMP processes that forms a hard copper oxide layer(by addition of hydrogen peroxide), which require both etching chemicals and hardabrasives (alumina/silica) for removal. In contrast, the copper iodide layer possess nearlyan order of magnitude less hardness, thus can be easily removed by the polymer polishingpad. The insoluble copper-iodide in the effluents can be removed by filtration and thechemicals can be recycled back for CMP polishing. This project will attempt successful demonstration of (i) copper polishing using abrasive-freeCMP slurries to meet present technical requirements, (ii) compatibility of AFCMPslurries to next generation ultra-low k dielectrics materials, (iii) the ability to filter andobtain consistent performances with the filtrate slurries.The rapid integration of low k interconnects and AFCMP is expected to lead tosubstantial profits and energy savings. Environmental friendly manufacturing, andincrease in hi-tech jobs. US will be a leader in copper low k CMP technology; and USbased semiconductor companies will have a local slurry supplier. Ensure US leadershipin nanotechnology.
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