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SBIR Phase I: Fabrication of low-bandgap nano-crystalline SiGeC thin films using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique

SBIR Phase I: Fabrication of low-bandgap nano-crystalline SiGeC thin films using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique
SBIR 第一阶段:使用等离子体增强化学气相沉积 (PECVD) 技术制造低带隙纳米晶 SiGeC 薄膜
批准号:
0740359
负责人:
Jian Hu
金额:
$9.96万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-01-01 至 2008-06-30

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中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase I project will develop nanocrystalline SiGeC thin films with an optical bandgap (Eg) in the range of 1.6-1.8 eV, and enhanced absorption characteristics, leading to low-cost, high-efficiency (20%) photovoltaic devices. Previous attempts at improving the photovoltaic efficiency have not been consistent and successful. The proposed approach uses plasma-enhanced chemical vapor deposition (PECVD) technique to deposit these films, which allows greater control of the process by being able to manipulate the plasma and electron temperatures to control the ion density in the plasma, with an independent control of the process parameters. This flexibility does not exist in the currently used techniques. With the proposed technique, stable and consistent films of SiGeC can be deposited on the desired substrate at moderate temperatures. If successfully developed, this technique could provide higher efficiency solar cells for the alternative energy market. The goal of highly stable films, high deposition efficiency and process scalability for large-scale manufacturing can only be achieved if the basic process can be proven.The broader impacts of this research will be in the low-cost photovoltaic (PV) devices for power generation market. If successfully completed, this research could lead to a strong partnership between solar cell manufacturers and equipment manufacturers, leading to a potentially lucrative photovoltaics market. Currently, electricity generated with available PV devices is 3-4 times more expensive as the conventional electricity. The selected materials (Si, Ge and C) for the thin film are abundantly available, which can significantly reduce the raw materials costs. A large body of basic knowledge of the requirements of solar electricity for the competitive market already exists, which makes the development of the process with a realistic performance target easy to achieve. The main challenge for achieving this goal lies in being able to control the deposition process to assure a stable and robust process, as the previous work has not been able to achieve consistent results. The initial target of producing a triple-junction thin-film solar cell is a worthy first product demonstration, which will prove the efficacy of the proposed technique, and attract third-party funding with little difficulty.
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Collaborative Research: Analysis and Solution Methods for Function Robust Optimization Models
SBIR Phase II: Fabrication of Low-bandgap Nano-crystalline SiGeC Thin Films Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique
  • 批准号:
    0925131
  • 项目类别:
    Standard Grant
  • 资助金额:
    $49.96万
  • 财政年份:
    2009
  • 负责人:
    Jian Hu
  • 依托单位:
SBIR Phase II: Thermophotovoltaics (TPV) Devices Based on II3-V2 Compounds
  • 批准号:
    9901787
  • 项目类别:
    Standard Grant
  • 资助金额:
    $39.98万
  • 财政年份:
    1999
  • 负责人:
    Jian Hu
  • 依托单位:
国内基金
海外基金
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark Supercooled Phase Transition
  • 批准号:
    24ZR1429700
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    YUICHIRO NAKAI
  • 依托单位:
ATLAS实验探测器Phase 2升级
  • 批准号:
    11961141014
  • 项目类别:
    国际(地区)合作与交流项目
  • 资助金额:
    3350万元
  • 批准年份:
    2019
  • 负责人:
    刘衍文
  • 依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
  • 批准号:
    41802035
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    12.0万元
  • 批准年份:
    2018
  • 负责人:
    张里
  • 依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究