SBIR Phase I: Development of the First SiC PEBB

该SBIR第一阶段研究项目是开发第一个碳化硅单片集成电力电子积木(PEBB)并将其商业化。提出的PEBB在同一芯片上集成了垂直结栅场效应晶体管(VJFET)和结势垒肖特基二极管(JBS)。这些创新包括与PEBB制造兼容的简单的完全自对准工艺，允许通过工艺将单片合并到单个JBS二极管中而不需要任何额外步骤的设计，允许通过完全自对准工艺制造具有亚微米垂直沟道的故障安全常断VJFET的设计和工艺，该工艺只需要一个掩模来制造VJFET的有源部分并且与PEBB集成兼容，以及适合于同步整流的PEBB设计，可以显著降低二极管的导通损耗并提高电路效率。随着电力电子系统在最终消耗之前处理的电能数量迅速增加，提高电力电子系统的效率和可靠性可以节省大量能源，并在未来几年产生深远的技术和社会效益。建议的PEBB可以应用于低到中等功率的应用，包括消费电子产品、工业电机控制、交通(混合动力汽车、插电式电动汽车)系统、军事和空间电力应用。

This SBIR Phase I research project is to develop and commercialize the first silicon carbide monolithically integrated Power Electronic Building Block (PEBB). The proposed PEBB integrates a Vertical Junction gate Field Effect Transistor (VJFET) and a Junction Barrier Schottky (JBS) diode on the same chip. The innovations include a simple fully self-aligned process compatible with the PEBB fabrication, a design that permits the monolithic merging into a single JBS diode by a process without any extra step, a design and process permitting the fabrication of the fail-safe normally-off VJFET with submicron vertical channel by a completely self-aligned process which requires only one mask for fabricating the active part of the VJFET and is compatible with the PEBB integration, and a PEBB design suitable for synchronous rectification that can substantially reduce diode conduction loss and improve circuit efficiency. With a quickly-increasing amount of the electric power being processed by power electronic systems before their final consumption, improvements on efficiency and reliability of these systems can save a substantial amount of energy and lead to profound technological and social benefits in the years to come. The proposed PEBB can be applied to low-to-medium power applications that cover consumer electronics, industrial motor control, transportation (Hybrid Electric Vehicles, Plug-in Electric Vehicles) systems, military and space power applications.