SBIR Phase I: Dual Magnetic Tunnel Junction (DMTJ) Materials and Structures for STT-RAM

SBIR 第一阶段：STT-RAM 的双磁隧道结 (DMTJ) 材料和结构

• 批准号: 0740877
• 负责人: Alexander Driskill-Smith
• 金额: $ 9.95万
• 依托单位: Grandis, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0740877&HistoricalAwards=false
• 关键词: SBIR; Phase; Dual; Magnetic; Tunnel

This SBIR Phase I research project is to investigate material innovations that are necessary to take spin transfer torque random access memory to the product development stage. Grandis will produce single and dual magnetic tunnel junction structures to determine processes and structures for producing maximum tunneling magnetoresistance with reduced critical current.Spin Transfer Torque Random Access Memory has the potential to provide a fast, nonvolatile, low power high density memory solution which could transform the commercial memory product landscape. Successful commercialization of this technology would provide new levels of performance in computing and data storage devices.

这个SBIR第一阶段的研究项目是调查材料创新，是必要的自旋转移力矩随机存取存储器的产品开发阶段。Grandis将生产单磁隧道结和双磁隧道结结构，以确定在降低临界电流的情况下产生最大隧穿磁阻的工艺和结构。自旋转移力矩随机存取存储器具有提供快速、非易失性、低功耗高密度存储器解决方案的潜力，这可能会改变商业存储器产品的格局。 这项技术的成功商业化将使计算和数据存储设备的性能达到新的水平。