SGER: In Situ Growth of Active Copper and Copper Oxide Films on Borosilicate Glass for Electronic Applications

非技术描述：当今支持美国经济的一些关键竞争技术：电子，太阳能和环境修复使用铜或氧化铜薄膜，通常沉积在电绝缘材料上。阿尔弗雷德大学的研究人员有一种方法可以在原地生长这些薄膜，从而绕过昂贵的沉积步骤。他们的研究伙伴罗切斯特理工学院（RIT）已经对初步薄膜进行了检查，以确定其在微电子领域的潜力。本提案的目标是确定这种变革性技术是否可以应用于满足薄膜对上述关键技术的要求，从而使器件更经济，更容易制造，从而更具竞争力。这个项目将涉及两所大学的研究生和本科生，并将用于鼓励纽约西部处境不利的农村社区的高中生，特别是吸引女学生接受科学和工程高等教育。技术细节：将确定在绝缘硼硅酸盐玻璃衬底上通过热处理原位生长铜、氧化亚铜和铜膜的条件，这些条件适用于三个关键技术。太阳能收集需要Cu2O连续膜，环境修复需要具有高表面积的Cu2O和CuO膜，微电子芯片制造需要CuO和铜膜。后者需要RIT微电子制造设施的合作。如果这些薄膜在这些技术中被证明是可行的，它将在技术上具有颠覆性，因为它将取代传统工艺中昂贵、有时非常困难和耗时的沉积步骤。将对研究生和本科生进行尖端表征设备（由纽约州科学技术和学术研究办公室慷慨提供）的重要培训。

NON-TECHNICAL DESCRIPTION: Some of the key competitive technologies of interest today for supporting the US economy: electronics, solar energy and environmental remediation use thin films of copper or copper oxide which are generally deposited on an electrically insulating material. Researchers at Alfred University have a way of growing these films in situ that circumvents the costly deposition steps. Preliminary films have been examined by their research partner, Rochester Institute of Technology (RIT), for their potential in microelectronics. The goal of this proposal is to determine whether this transformative technology can be applied to meet the requirement of the films for the key technologies mentioned above, thus making devices more economical, easy to manufacture and consequently more competitive. This project will involve graduate and undergraduate students from both universities and will be used to encourage high school students in the disadvantaged rural communities of western New York, in particular to attract women students into higher education in science and engineering.TECHNICAL DETAILS: The conditions for growing in situ cupric, cuprous oxide and copper films on an insulating borosilicate glass substrate by heat treatment appropriate to three key technologies will be determined. Cu2O continuous films are needed for solar collection, both Cu2O and CuO with high surface area for environmental remediation and both CuO and copper films for microelectronic chip fabrication. The latter requires the collaboration of RIT Microelectronics Fabrication Facilities. If these films prove viable in any of these technologies it will be disruptive technologically in that it will replace costly and sometimes very difficult and time-consuming deposition steps in the conventional process. Significant training of both graduate and undergraduate students with cutting edge characterization equipment (generously supplied by New York State Office of Science Technology and Academic Research) will be carried out.