SGER: Frequency tunable terahertz resonator devices

SGER：频率可调谐太赫兹谐振器装置

• 批准号: 0824920
• 负责人: Eva Schubert
• 金额: --
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2009-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0824920&HistoricalAwards=false
• 关键词: SGER; Frequency; tunable; terahertz; resonator

AbstractECCS-0824920E. Schubert, University of Nebraska-LincolnObjectiveThis proposal focuses on design, fabrication, and proof-of-concept for novel frequency-tunable terahertz resonator structures made from chiral nanocomposit materials (CNM). Nanoscale arrangement and hybridization creates artificial materials (nanostructure electrically conductive coils) with entirely new properties. Applications are envisioned for areas such as nano-photonics, nano-electromechanics, nano-magnetics, nano-electromagnetics, and nano-sensors, for example. The goal of the proposal is to show the feasibility of a frequency-tunable CNM terahertz (THz) resonator device structure using conductive nanocoils and Schottky contact capacitors produced from the depletion layer at the interface between the coil and semiconductor substrate. The goal will be reached in the following steps: 1. Investigation of depletion layer properties at the interface between aluminum sculptured thin films and p-type doped silicon substrates and manipulation of the depletion layer thickness by an external applied electric field. 2. Filling and cross-linking the polymer polyvinyl phenol (PVP) into the sculptured thin film and demonstration of resonance frequency tuning in hybrid resonator device structure. 3. Reduction of the capacitor area by using patterned substrates for glancing angle deposition of aluminum nanocoils on p-type silicon substrates. 4. First demonstration of tunable terahertz resonator devices from chiral nanostructure hybrid materials with reduced capacitor area by means of terahertz ellipsometry. The frequency tuning will be obtained by applying an external electrical bias to the depletion layer. Intellectual Merit The research plan will lead to breakthroughs for the design and performance of new hybrid electromagnetic devices based on advances for revolutionary new electromagnetic materials from chiral nanostructure hybrids. The active THz resonator device structures may be incorporated in THz sources and detectors and close thereby an current gap electronic device technology. Broader impact Terahertz devices are very promising for applications in medicine, remote sensing, imaging, and satellite communications, and they might be also useful for homeland security tasks. Nonetheless the terahertz spectral region is one of the most under-utilized frequency ranges. The proposed active THz resonator device structures will contribute to enhance THz technology with an immediate influence on the society.

摘要ECCS-0824920 E。舒伯特，内布拉斯加大学林肯分校该提案的重点是设计，制造和概念验证的新型频率可调谐太赫兹谐振器结构由手性纳米复合材料（CNM）。纳米级排列和杂交创造了具有全新特性的人工材料（纳米结构导电线圈）。例如，纳米光子学、纳米机电学、纳米磁力学、纳米电磁学和纳米传感器等领域的应用。该提案的目标是显示频率可调谐的CNM太赫兹（THz）谐振器器件结构的可行性，该结构使用导电纳米线圈和肖特基接触电容器，该电容器由线圈和半导体衬底之间的界面处的耗尽层产生。该目标将通过以下步骤实现：1.铝雕塑薄膜与p型掺杂硅衬底界面处耗尽层特性的研究及外加电场对耗尽层厚度的控制。 2.将聚合物聚乙烯基苯酚（PVP）填充并交联到雕塑薄膜中，并演示了混合谐振器器件结构中的谐振频率调谐。 3.通过使用图案化衬底在p型硅衬底上进行铝纳米线圈的掠射角沉积来减小电容器面积。 4.利用太赫兹椭圆偏振法首次演示了电容面积减小的手性纳米结构混合材料的可调谐太赫兹谐振器器件。频率调谐将通过向耗尽层施加外部电偏置来获得。该研究计划将基于手性纳米结构混合物的革命性新电磁材料的进展，为新混合电磁器件的设计和性能带来突破。有源THz谐振器器件结构可以被结合在THz源和检测器中，并且由此接近当前的间隙电子器件技术。影响更广的太赫兹设备在医学、遥感、成像和卫星通信方面的应用前景非常广阔，它们也可能用于国土安全任务。尽管如此，太赫兹光谱区域是最未充分利用的频率范围之一。所提出的有源太赫兹谐振器器件结构将有助于提高太赫兹技术，并对社会产生直接影响。