U.S.-China Planning Visits to Develop Partnerships for Research and Education on SiGe Power Devices and dc-dc Power Converters

中美计划互访以发展 SiGe 功率器件和 DC-DC 电源转换器研究和教育合作伙伴关系

• 批准号: 0832772
• 负责人: Jiann-Shiun Yuan
• 金额: $ 1.52万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-10-01 至 2010-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0832772&HistoricalAwards=false
• 关键词: U.S.; China; Planning; Visits; Develop

0832772YuanThis award supports a U.S.- China planning visit to develop partnerships for research and education on SiGe (silicon-germanium) power devices and dc-dc power converters. The visit will enable Professor Jiann Yuan in the Electrical Engineering Department at the University of Central Florida in Orland to meet with Professor Jun Xu, Director of the Microelectronics Institute at Tsinghua University in Beijing, China and Professor Dehong Xu, Vice Dean for the College of Electrical Engineering at Zhejiang University in Hangzhou, China. Their proposed project will involve the design and analysis of a power converter on a chip concept. Their objective is to achieve a record-setting 40% on-resistance reduction with a low cost CMOS (complementary metal oxide semiconductor). The ultimate goal is to provide research and education experiences for U.S. students in China. Energy conservation and environmental protection are two major challenges faced by today?s communities. Power management technology holds the key to potential annual savings of $400 billion in electrical energy worldwide. A high performance SiGe power MOSFET (metal oxide semiconductor field effect transistor) in the power management market will help meet the challenge in conserving energy and protecting the environment. There is sufficient overlap of interests between faculty at the three universities to indicate that the researchers can successfully pursue the activities proposed, and that the interaction will benefit both sides. The research will have broad impact in the power management area. It is anticipated that the inclusion of two U.S. graduate students in this visit will provide them unique training and education opportunities by providing them a global research experience. These early collaborations between the scientists and students from each country will likely lead to long-term collaborations that will benefit both institutions.

该奖项支持中美计划访问，以发展SiGe（硅锗）功率器件和dc-dc功率转换器的研究和教育伙伴关系。此次访问将使位于奥兰多的中佛罗里达大学电气工程系袁建安教授有机会会见中国北京清华大学微电子研究所所长徐军教授和中国杭州浙江大学电气工程学院副院长徐德宏教授。他们提出的项目将涉及芯片上功率转换器概念的设计和分析。他们的目标是用低成本的CMOS（互补金属氧化物半导体）实现创纪录的40%导通电阻降低。最终目标是为在中国的美国学生提供研究和教育经验。节能和环保是当今世界面临的两大挑战。年代的社区。电源管理技术是全球每年节省4000亿美元电能的关键。高性能SiGe功率MOSFET（金属氧化物半导体场效应晶体管）在电源管理市场将有助于应对节能和保护环境的挑战。这三所大学的教师之间有足够的兴趣重叠，表明研究人员可以成功地开展所提议的活动，并且这种互动将使双方受益。该研究将在电源管理领域产生广泛的影响。预计此次访问的两名美国研究生将通过提供全球研究经验，为他们提供独特的培训和教育机会。来自两国的科学家和学生之间的这些早期合作可能会导致长期合作，这将使两个机构都受益。