Internship for Research in GaAs Device and Circuit Modeling

GaAs 器件和电路建模研究实习

• 批准号: 9311775
• 负责人: Jiann-Shiun Yuan
• 金额: $ 2万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-02-01 至 1996-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9311775&HistoricalAwards=false
• 关键词: Internship; Research; GaAs; Device; Circuit

9311775 Yuan Theoretical and experimental studies GaAs optoelectronic devices BiCMOS circuits and HBT's will be undertaken. The optoelectronic device research will study GaAs photoconductors and phototransistors, developing large-signal and small-signal heterojunction phototransistor and photodiode models for optelectronic circuit design. MEDICI will be used for obtaining physical insight into photon and electron properties in GaAs materials, and the effect of different light illumination on a number of device parameters will be investigated both experimentally and theoretically. The study of BiCMOS research will focus on effects of radiation and scaling on BiCMOS circuit performance. BiCOMS test circuits will be exposed to gamma and neutron radiation and post-irradiation performance will be characterized. A model to predict the onset of the 'failure mode' of a BiCMOS inverter circuit will be developed. In the heterojunction bipolar transistor research the theory of intermodulation based on device transconductance. Early voltage heterojunction depletion capacitance, and heterojunction diffusion capacitance will be studied. The phase noise of the HBT oscillator will also be studied. Coupling effects of avalanche breakdown, band discontinuity, negative collector current, and surface recombination on phase noise will be investigated. Furthermore, the impact of supply voltage scaling on the performance of communication circuits like the pager and the transmitter will be examined. ***

将进行9311775元的理论和实验研究，包括砷化镓光电子器件、BiCMOS电路和异质结双极晶体管。光电子器件研究将研究砷化镓光导体和光电晶体管，开发用于光电电路设计的大信号和小信号异质结光电晶体管和光电二极管模型。MEDICI将被用来获得对GaAs材料中光子和电子性质的物理洞察，并且将从实验和理论上研究不同的光照度对一些器件参数的影响。BiCMOS的研究将集中在辐射和尺度对BiCMOS电路性能的影响上。BiCOMS测试电路将暴露在伽马和中子辐射下，并将表征辐照后的性能。我们将建立一个模型来预测BiCMOS型反相器电路的“失效模式”。在异质结双极晶体管中，研究了基于器件跨导的互调理论。对早期电压异质结耗尽电容和异质结扩散电容进行了研究。对HBT振荡器的相位噪声也进行了研究。我们将研究雪崩击穿、能带不连续、负集电极电流和表面复合对相位噪声的耦合影响。此外，还将研究电源电压缩放对寻呼机和发射机等通信电路性能的影响。***