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CAREER: Spin dependent transport properties of semiconducting nanostructures

CAREER: Spin dependent transport properties of semiconducting nanostructures
职业:半导体纳米结构的自旋相关输运特性
批准号:
0845501
负责人:
John Philip
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-08-01 至 2015-07-31

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中文摘要
翻译
提案标题:半导体纳米结构的自旋相关输运性质John Philip,美国天主教大学本研究的目的是探索提高铁磁/半导体器件结构中载流子自旋输运效率的方法。该方法是为了减少铁磁/半导体界面的耗尽区,并调整界面电阻面积积,以实现大的自旋输运,实现实用的设备。这种方法是探索技术上重要的半导体通道,如硅,锗和半导体低带隙和大自旋轨道耦合。智力优势:为了设计和制造高性能的半导体自旋电子器件,一种新的技术来调整铁磁/半导体隧道接触的界面电阻,使用非磁性,低功函数层的薄层进行了探索。这种方法允许探索合适的低功函数材料来操纵界面特性和新颖的器件设计,以实现高效的基于自旋电子学的自旋电子学。更广泛的影响:这一研究将为自旋电子学领域确立一个具有重大影响的新方向,从而使新一代多功能新型器件成为可能。基于自旋的器件的优点包括低功耗、高存储密度以及具有低漏电流和开关能量的晶体管。这项研究的综合教育和推广组成部分将提供新的内容,在纳米技术,动手学习的机会,为本科生和研究生,以及哥伦比亚特区高中学生和教师,特别是为少数民族和代表性不足的学生的大人口的新课程。该计划还涵盖了科学和工程的各个方面,包括半导体加工,器件设计和制造以及对技术经济至关重要的超高真空技术。
英文摘要
Proposal Title: Spin dependent transport properties of semiconducting nanostructuresJohn Philip, The Catholic University of AmericaThe objective of this research is to explore methods to improve the efficiency of carrier spin transport through ferromagnet/semiconductor device structures. The approach is to reduce the depletion region in a ferromagnet/semiconductor interface and tune the interface resistance-area product for achieving large spin transport for realizing practical devices. This approach is explored on technologically important semiconducting channels such as silicon, germanium and semiconductors with low-band-gap and large spin-orbit coupling. Intellectual Merit: In order to design and fabricate high-performance semiconductor spintronic devices, a novel technique to tune the interface resistance of the ferromagnet/semiconductor tunnel contacts using a thin layer of non-magnetic, low-work-function layer is explored. This approach allows exploration of suitable low-work-function materials for manipulating interface properties and novel device designs to achieve efficient semiconductor-based spin electronics. Broader Impacts: This research will establish a new direction with significant impact on the field of spin electronics and thus make possible new generations of novel devices with multi-functionalities. The advantages of spin-based devices include low power consumption, high storage density and transistors with low leakage currents and switching energies. The integrated educational and outreach component of this research will provide novel content for new courses in nanotechnology, hands-on learning opportunities for undergraduate and graduate students as well as District of Columbia high school students and teachers, especially for the large population of minority and under-represented students. This program also covers diverse aspects of science and engineering including semiconductor processing, device design and fabrication and ultra-high vacuum techniques that are essential for a technology-based economy.
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