CAREER: New Computational Paradigms for Large-scale ab-initio Simulations of Emerging Electronic Materials and Devices
CAREER: New Computational Paradigms for Large-scale ab-initio Simulations of Emerging Electronic Materials and Devices
批准号:
0846457
负责人:
Eric Polizzi
金额:
$40.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-02-01 至 2014-01-31
中文摘要
摘要提案题目:新兴电子材料和器件大规模ab-initio模拟的新计算范式名称:Polizzi, EricPI机构:马萨诸塞大学阿默斯特分校本研究的目的是显著增强计算建模和高性能计算在设计新型高速、高功能电子器件中的作用。该项目旨在为材料科学、化学、纳米电子学和生物纳米技术等应用领域的大规模原子模拟提供坚实的基础。然后提出了特定的先进数学技术和高性能并行算法,仅从组成原子的知识来模拟大型系统的电子结构和输运性质。为了实现这些目标,使用高效的实空间网格技术和密度泛函理论进行基于第一性原理的连续体建模和计算。输运模型从标准的非平衡格林?一个最先进的纳米电子学模拟环境(NESSIE)将被开发用于新兴材料和器件的原型设计。智力优势:本项目提出将材料和器件量子原子模拟的最新突破与高性能计算的最新突破融合。这些结果有可能促进对新兴电子学纳米尺度物理学的认识和理解,并集中实验研究。更广泛的影响:该项目将加速量子技术的发展及其对全球经济的影响。将所需的高性能数值模拟工具打包到便携式软件中也将对科学、工程和教育产生重大而广泛的影响。
英文摘要
AbstractProposal Number: ECCS-0846457Proposal Title: New Computational Paradigms for Large-scale ab-initio Simulations of Emerging Electronic Materials and DevicesPI Name: Polizzi, EricPI Institution: University of Massachusetts AmherstThe objective of this research is to enhance significantly the role of computational modeling and high-performance computing for designing new classes of high speed, and high functionality electronic devices. The project aims at providing a sound basis to face the challenges in large-scale atomistic simulations for applications ranging from material sciences and chemistry to nanoelectronics and bio-nanotechnology. Specific advanced mathematical techniques and high-performance parallel algorithms are then proposed for simulating the electronic structure and transport properties of large scale systems only from the knowledge of the constituent atoms. To achieve these goals, first-principle continuum-based modeling and calculations are performed using efficient real-space mesh techniques and within the density functional theory. The transport models range from a standard non-equilibrium Green?s function formalism approach to more reliable time dependent and dissipation models for exploring transition between micro and grand-canonical representations A state-of-the-art nanoelectronics simulation environment, NESSIE, will be developed for prototyping emerging materials and devices. Intellectual Merit: This project proposes the fusion of the recent breakthroughs in quantum atomistic simulation of materials and devices with those in high-performance computing. The results are potentially capable of advancing knowledge and understanding of nanoscale physics of emerging electronics and focusing experimental investigation. Broader Impact: This project will accelerate the development of quantum technologies and their impacts in the global economy. Packaging the required high-performance numerical simulation tools into portable software will also have significant broader impacts in science and engineering and education.
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