SBIR Phase I: Development of Silicon Carbide Power Device and Circuit CAD Tools and Prototyping of SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications

SBIR 第一阶段：碳化硅功率器件和电路 CAD 工具的开发以及用于混合动力汽车和电力电子应用的基于 SiC 的功率转换器的原型设计

• 批准号: 0912683
• 负责人: Siddharth Potbhare
• 金额: $ 10万
• 依托单位: CoolCAD Electronics
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0912683&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Silicon; Carbide

This Small Business Innovation Research Phase I project is focused on developing computer aided design (CAD) tools for the design of state-of-the-art Silicon Carbide (SiC) Power Double-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistor (DMOSFET) and Insulated Gate Bipolar Transistor (IGBT) based electric power-conversion systems for hybrid and all-electric commercial and military vehicles.These tools will aid device manufacturers and power conversion system designers, to develop high power, energy-efficient, and light-weight, power converters using SiC power devices. These devices are capable of working at extremely high temperatures and power levels that are beyond the theoretical limits of currently used Silicon power semiconductors. Use of this technical know-how and tool set for designing novel power conversion systems for automobiles will play a direct role in reducing green-house gases in the atmosphere. This project will assist the design of energy efficient, ultra-low emission, and environmentally friendly automobiles.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

这个小型企业创新研究第一阶段项目的重点是开发计算机辅助设计（CAD）工具，用于设计最先进的碳化硅（SiC）功率双扩散金属氧化物半导体场效应晶体管（DMOSFET）和绝缘栅双极晶体管（IGBT）基于混合动力和全功率转换系统。这些工具将帮助器件制造商和功率转换系统设计人员使用SiC功率器件开发高功率、高能效和重量轻的功率转换器。这些器件能够在极高的温度和功率水平下工作，超出了目前使用的硅功率半导体的理论极限。使用这种技术知识和工具来设计新型汽车动力转换系统将在减少大气中的温室气体方面发挥直接作用。该项目将协助设计节能，超低排放和环保汽车。该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。