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SBIR Phase I: Development of Silicon Carbide Power Device and Circuit CAD Tools and Prototyping of SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications

SBIR Phase I: Development of Silicon Carbide Power Device and Circuit CAD Tools and Prototyping of SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications
SBIR 第一阶段:碳化硅功率器件和电路 CAD 工具的开发以及用于混合动力汽车和电力电子应用的基于 SiC 的功率转换器的原型设计
批准号:
0912683
负责人:
Siddharth Potbhare
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-07-01 至 2009-12-31

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中文摘要
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英文摘要
This Small Business Innovation Research Phase I project is focused on developing computer aided design (CAD) tools for the design of state-of-the-art Silicon Carbide (SiC) Power Double-Diffused Metal-Oxide-Semiconductor Field-Effect-Transistor (DMOSFET) and Insulated Gate Bipolar Transistor (IGBT) based electric power-conversion systems for hybrid and all-electric commercial and military vehicles.These tools will aid device manufacturers and power conversion system designers, to develop high power, energy-efficient, and light-weight, power converters using SiC power devices. These devices are capable of working at extremely high temperatures and power levels that are beyond the theoretical limits of currently used Silicon power semiconductors. Use of this technical know-how and tool set for designing novel power conversion systems for automobiles will play a direct role in reducing green-house gases in the atmosphere. This project will assist the design of energy efficient, ultra-low emission, and environmentally friendly automobiles.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).
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