Fundamentals and Applications of Thermoelectric Transport in Nanometer Scale Phase-Change Bridge Memory Devices

纳米级相变桥存储器件中热电传输的基础和应用

• 批准号: 0925973
• 负责人: Helena Silva
• 金额: $ 30.21万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0925973&HistoricalAwards=false
• 关键词: Fundamentals; Applications; Thermoelectric; Transport; Nanometer

Fundamentals and Applications of Thermoelectric Transport in Nanometer Scale Phase-Change Bridge Memory Devices Helena Silva (PI, University of Connecticut) and Chung Lam (Co-PI, IBM Watson Research Center) The objective of this project is to investigate thermoelectric transport in nanometer scale phase-change bridge memory devices and to devise improved phase-change memories that utilize the asymmetries introduced by thermoelectric effects such as multi-bit per cell operation.Phase-change memory has been the subject of intensive research due to the continued need for higher capacity storage and expectations of the end of current memory scaling in the near future. Our findings point to the significance of Thomson Effect (thermoelectric effect in uniform materials) in phase-change processes. A better understanding of thermoelectric transport and phase-changes at the micrometer and nanometer scales can be applied towards thermoelectric devices for clean power generation and cooling, higher efficiency solar cells that combine photovoltaic with thermoelectric generation and on-chip cooling for micro/nanoelectronics. This project is carried out in partnership with IBM Watson Research Center. This research consists of detailed analysis of Thomson Effect at nanometer scale using phase-change memory devices. The role of electronic convective and electron-phonon scattering components in the thermoelectric transport in these structures is investigated. Students learn about nanoelectronic devices, phase changes, thermoelectric transport, nanofabrication, electrical and physical characterization, instrumentation and numerical modeling. This project allows investigation of basic physical phenomena relevant to a promising memory device technology and offers a rich program for educational and outreach activities at all levels. This collaborative research strengthens an important relationship between University of Connecticut faculty and students and IBM scientists.

热电传输在纳米级相变桥存储器件中的基础和应用Helena Silva(美国康涅狄格大学)和Chung Lam(IBM Watson研究中心)本项目的目标是研究纳米级相变桥存储器件中的热电传输，并设计改进的相变存储器，利用热电效应引入的不对称性，如每单元多位操作。由于对更高容量存储的持续需求和对当前存储器扩展的预期，相变存储器一直是密集研究的主题。我们的发现指出了汤姆逊效应(均匀材料中的热电效应)在相变过程中的重要性。更好地了解微米和纳米尺度上的热电传输和相变可以应用于清洁发电和冷却的热电设备、将光伏与热电发电相结合的更高效率的太阳能电池，以及用于微纳电子的芯片上冷却。该项目是与IBM沃森研究中心合作进行的。这项研究包括利用相变存储器件在纳米尺度上详细分析汤姆森效应。研究了电子对流和电子-声子散射分量在这些结构的热电输运中的作用。学生学习纳米电子器件、相变、热电传输、纳米制造、电气和物理特性、仪器和数值建模。该项目允许调查与前景看好的存储设备技术相关的基本物理现象，并为各级教育和推广活动提供了丰富的方案。这项合作研究加强了康涅狄格大学教职员工和学生与IBM科学家之间的重要关系。