Fundamentals and Applications of Thermoelectric Transport in Nanometer Scale Phase-Change Bridge Memory Devices

纳米级相变桥式存储器件中热电输运的基本原理及其应用（康涅狄格大学PI）和Chung Lam（共同PI，IBM沃森研究中心）本项目的目标是研究纳米级相变桥式存储器件中的热电输运，并设计出利用热电效应引入的不对称性的改进相变存储器，例如多-每单元操作位。由于对更高容量存储的持续需求以及对当前存储器扩展在不久的将来结束的预期，相变存储器一直是深入研究的主题。我们的研究结果指出了汤姆逊效应（均匀材料中的热电效应）在相变过程中的重要性。更好地理解热电传输和相变在微米和纳米尺度上可以应用于热电装置清洁发电和冷却，更高效率的太阳能电池，结合联合收割机光伏与热电发电和芯片上冷却微/纳米电子。该项目是与IBM沃森研究中心合作开展的。本研究系利用相变化记忆元件，在奈米尺度上详细分析汤姆逊效应。电子对流和电子-声子散射组件在这些结构中的热电输运的作用进行了研究。学生学习纳米电子器件，相变，热电传输，纳米纤维，电气和物理特性，仪器仪表和数值建模。该项目允许调查与有前途的存储设备技术相关的基本物理现象，并为各级教育和推广活动提供丰富的计划。这项合作研究加强了康涅狄格大学教师和学生与IBM科学家之间的重要关系。

Fundamentals and Applications of Thermoelectric Transport in Nanometer Scale Phase-Change Bridge Memory Devices Helena Silva (PI, University of Connecticut) and Chung Lam (Co-PI, IBM Watson Research Center) The objective of this project is to investigate thermoelectric transport in nanometer scale phase-change bridge memory devices and to devise improved phase-change memories that utilize the asymmetries introduced by thermoelectric effects such as multi-bit per cell operation.Phase-change memory has been the subject of intensive research due to the continued need for higher capacity storage and expectations of the end of current memory scaling in the near future. Our findings point to the significance of Thomson Effect (thermoelectric effect in uniform materials) in phase-change processes. A better understanding of thermoelectric transport and phase-changes at the micrometer and nanometer scales can be applied towards thermoelectric devices for clean power generation and cooling, higher efficiency solar cells that combine photovoltaic with thermoelectric generation and on-chip cooling for micro/nanoelectronics. This project is carried out in partnership with IBM Watson Research Center. This research consists of detailed analysis of Thomson Effect at nanometer scale using phase-change memory devices. The role of electronic convective and electron-phonon scattering components in the thermoelectric transport in these structures is investigated. Students learn about nanoelectronic devices, phase changes, thermoelectric transport, nanofabrication, electrical and physical characterization, instrumentation and numerical modeling. This project allows investigation of basic physical phenomena relevant to a promising memory device technology and offers a rich program for educational and outreach activities at all levels. This collaborative research strengthens an important relationship between University of Connecticut faculty and students and IBM scientists.