STTR Phase I: Ammonothermal Growth of Doped Aluminum Gallium Nitride Single Crystals for Energy Efficient Solid State Lighting and Tunable LED?s

STTR 第一阶段：用于节能固态照明和可调 LED 的掺杂氮化铝镓单晶的氨热生长

• 批准号: 0930035
• 负责人: Henry Giesber
• 金额: $ 15万
• 依托单位: ADVANCED PHOTONIC CRYSTALS, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-01 至 2010-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0930035&HistoricalAwards=false
• 关键词: STTR; Phase; Ammonothermal; Growth; Doped

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).This Small Business Technology Transfer Phase I project will address the problem of a multifunctional wide band-gap aluminum gallium nitride single crystal substrate that will enable low-defect, high-performance epitaxial growth. Since much of the energy consumed in the U.S. used for traditional lighting is wasted as heat, solid-state lighting (SSL) has the potential to reduce our energy consumption dramatically. The technology is lacking a critical material that will allow production of high efficiency devices however. Single crystals of AlGaN substrate will enable the production of a tunable bandgap material with a variable band-edge from the visible to the UV range, including the solar blind region between 250-280nm. In addition to solid-state lighting, such a multifunctional material can be used for UV-Vis diode lasers and UV photodetectors in the solar blind region. This technology exploits six years of joint engineering and design of a proven, commercially operational autoclave from APC and Clemson University. The technology can contain the high temperatures and pressures required for hydrothermal growth of oxide crystals (700 C and 4kbar). To accomplish the objectives of Phase I the current hydrothermal model autoclave design will be adapted to work for ammonothermal crystal growth. Broader ImpactsThis Small Business Technology Transfer Phase I project will support the next generation of crystal growth technology in the United States. It will develop a commercially viable route to a key material in solid-state lighting, UV-Vis diode lasers and UV photodetection. The crystal growth industry has exited the United States, leaving a significant gap in the ability to produce strategically important solids onshore. The technical skills to grow single crystals for important materials have decreased significantly in the US. This project will develop a next generation technology that will contribute to US self-sufficiency in a strategic area of materials science. The project will also lead to training of a young postdoctoral fellow in the field of crystal growth, an area that is underdeveloped in the US. The project will also contribute to energy self-sufficiency. Solid-state lighting is expected to save significant energy by improving efficiency and minimizing waste heat. A primary limitation to widespread introduction of solid-state lighting is lack of suitable substrates. This project will provide materials that will enable much high efficiency and long life solid state lighting as well as solid state diode lasers and various other technologies that will provide competitive advantage to the US.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。该小企业技术转让第一阶段项目将解决多功能宽带隙氮化铝镓单晶衬底的问题，该衬底将实现低缺陷，高性能外延生长。由于美国传统照明消耗的大部分能源都被浪费在热量上，固态照明（SSL）有可能大幅降低我们的能源消耗。然而，该技术缺乏一种关键材料，可以生产出高效率的设备。AlGaN衬底的单晶将能够生产具有从可见光到UV范围的可变带边的可调带隙材料，包括250- 280 nm之间的太阳盲区。除了固态照明，这种多功能材料还可用于太阳盲区的紫外-可见二极管激光器和紫外光探测器。这项技术利用了APC和克莱姆森大学经过六年联合工程和设计的成熟的商业化高压灭菌器。该技术可以包含氧化物晶体水热生长所需的高温和高压（700 ℃和4kbar）。 为了实现第一阶段的目标，目前的水热模型高压釜设计将适用于氨晶体生长。 更广泛的影响这个小企业技术转让第一阶段项目将支持美国的下一代晶体生长技术。它将开发一种商业上可行的途径，用于固态照明，紫外可见二极管激光器和紫外光探测的关键材料。晶体生长行业已经退出美国，在陆上生产具有重要战略意义的固体的能力方面存在重大差距。在美国，为重要材料生长单晶的技术技能已经大大下降。该项目将开发下一代技术，有助于美国在材料科学的战略领域实现自给自足。该项目还将在晶体生长领域培训一名年轻的博士后研究员，这是美国欠发达的领域。该项目还将促进能源自给自足。固态照明有望通过提高效率和最大限度地减少废热来节省大量能源。广泛引入固态照明的主要限制是缺乏合适的基板。该项目将提供材料，使高效率和长寿命的固态照明以及固态二极管激光器和各种其他技术，将提供竞争优势，以美国。