STTR Phase I: Fullerenic Molecule-Silica Hybrid Dielectrics for the Field-Sensitive Tunneling Barriers in Flash Memory

这个小企业技术转移第一阶段项目是开发一种新型富勒烯-二氧化硅杂化材料系统，该系统作为器件异质结构的一部分具有多种功能。最终目标是开发一种高性能可扩展的非易失性存储器，使用栅极堆栈包括硅-富勒烯双隧道结。这项研究工作的发现有可能帮助克服200亿美元闪存产业的规模障碍。可以进一步修改隧道势垒以产生有益的共振隧道效应，从而提高保留率和编程时间的比率。这个第一阶段项目的预期结果是通过在栅极堆栈中使用工程富勒烯分子来扩展闪存的几何和电压缩放。根据存储特性建立定量模型进行设计优化。该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。

This Small business Technology Transfer Phase I project is to develop a novel Fullerene-Silica hybrid material system that exhibits multiple functionalities as part of a device heterostructure. The end goal is to develop a high-performance scalable non-volatile memory using a gate stack including a silica-fullerene double tunnel junction. The findings from this research work have the potential to help overcome scaling roadblocks in a 20B$ flash memory industry. The tunneling barrier can be further modified to create beneficial resonant tunneling effects that can boost the ratio of retention and program time. The expected result from this Phase 1 project is the extension of geometrical and voltage scaling of Flash memory by using engineered fullerene molecules in the gate stack. A quantitative model will be built for design optimization in terms of memory characteristics. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).