STTR Phase I: Fullerenic Molecule-Silica Hybrid Dielectrics for the Field-Sensitive Tunneling Barriers in Flash Memory

这个小型企业技术转移第一阶段的项目是开发一种新型的富勒烯-二氧化硅杂化材料系统，该系统作为器件异质结构的一部分，具有多种功能。最终目标是开发一种使用包括二氧化硅-富勒烯双隧道结的栅堆栈的高性能可扩展非易失性存储器。这项研究工作的发现有可能帮助克服价值200亿美元的闪存行业的扩展障碍。隧道势垒可以被进一步修改以产生有益的共振隧道效应，其可以提高保持率和编程时间。这个第一阶段项目的预期结果是通过在栅极堆栈中使用工程富勒烯分子来扩展闪存的几何和电压缩放。根据记忆特性建立了优化设计的定量模型。该奖项是根据2009年《美国复苏和再投资法案》(公法111-5)提供资金的。

This Small business Technology Transfer Phase I project is to develop a novel Fullerene-Silica hybrid material system that exhibits multiple functionalities as part of a device heterostructure. The end goal is to develop a high-performance scalable non-volatile memory using a gate stack including a silica-fullerene double tunnel junction. The findings from this research work have the potential to help overcome scaling roadblocks in a 20B$ flash memory industry. The tunneling barrier can be further modified to create beneficial resonant tunneling effects that can boost the ratio of retention and program time. The expected result from this Phase 1 project is the extension of geometrical and voltage scaling of Flash memory by using engineered fullerene molecules in the gate stack. A quantitative model will be built for design optimization in terms of memory characteristics. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).