STTR Phase I: Fullerenic Molecule-Silica Hybrid Dielectrics for the Field-Sensitive Tunneling Barriers in Flash Memory

这个小企业技术转让第一阶段项目是开发一种新型的富勒烯-二氧化硅混合材料系统，作为器件异质结构的一部分具有多种功能。最终目标是开发一种高性能的可扩展的非易失性存储器，使用包括二氧化硅-富勒烯双隧道结的栅极堆叠。这项研究工作的结果有可能帮助克服200亿美元闪存行业的扩展障碍。可以进一步修改隧穿势垒以产生有益的共振隧穿效应，其可以提高保持时间和编程时间的比率。第一阶段项目的预期结果是通过在栅极堆叠中使用工程富勒烯分子来扩展闪存的几何和电压缩放。根据存储器特性建立了优化设计的定量模型。该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。

This Small business Technology Transfer Phase I project is to develop a novel Fullerene-Silica hybrid material system that exhibits multiple functionalities as part of a device heterostructure. The end goal is to develop a high-performance scalable non-volatile memory using a gate stack including a silica-fullerene double tunnel junction. The findings from this research work have the potential to help overcome scaling roadblocks in a 20B$ flash memory industry. The tunneling barrier can be further modified to create beneficial resonant tunneling effects that can boost the ratio of retention and program time. The expected result from this Phase 1 project is the extension of geometrical and voltage scaling of Flash memory by using engineered fullerene molecules in the gate stack. A quantitative model will be built for design optimization in terms of memory characteristics. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).